MT48V8M32LFF5-10 TR Allicdata Electronics
Allicdata Part #:

MT48V8M32LFF5-10TR-ND

Manufacturer Part#:

MT48V8M32LFF5-10 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 256M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Par...
DataSheet: MT48V8M32LFF5-10 TR datasheetMT48V8M32LFF5-10 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT48V8M32
Supplier Device Package: 90-VFBGA (8x13)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3 V ~ 2.7 V
Memory Interface: Parallel
Access Time: 7ns
Series: --
Clock Frequency: 100MHz
Memory Size: 256Mb (8M x 32)
Technology: SDRAM - Mobile LPSDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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Memory

The MT48V8M32LFF5-10 TR is an advanced memory component designed for a wide range of application in consumer and embedded system products. It features a parallel-interface architecture with a wide range of read/write cycles that makes it ideal for memory-intensive applications. It offers high performance, low power operation, excellent error detection and correction capabilities, and full system reliability.

Application Field

The MT48V8M32LFF5-10 TR is optimized for applications such as instrumentation, data processing, automotive, medical, industrial, consumer electronics, and gaming. This type of memory component is well suited for products ranging from consumer products, such as digital cameras and smart phones, to industrial and medical equipment. It can be used to store large amounts of data and provide reliable operation in the most critical applications.

Working Principle

The MT48V8M32LFF5-10 TR is a type of dynamic random access memory (DRAM). The memory device contains an array of memory cells, consisting of transistors, capacitors, and associated circuitry. The memory cells are organized into columns and rows, and each cell can be independently addressed. When a cell is addressed, its contents are accessed by applying a charge to its associated capacitor.

During a write operation, the data to be stored is written to each addressed cell. During a read operation, the capacitors in each addressed cell are discharged and the data is read from the capacitor. The memory controller allocates access to each cell and provides the necessary commands for correct operation.

The MT48V8M32LFF5-10 TR is designed with a low power consumption, allowing for efficient operation. It also incorporates a number of error detection and correction algorithms, ensuring reliable operation in mission-critical applications. In addition, the memory component is equipped with an on-chip temperature-sensing diode, allowing for temperature-sensitive applications.

Overall, the MT48V8M32LFF5-10 TR is an advanced memory component that is well suited for a wide range of applications. Its combination of high performance, error detection and correction, and low power consumption make it an ideal choice for demanding applications in products ranging from consumer electronics to industrial equipment.

The specific data is subject to PDF, and the above content is for reference

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