Allicdata Part #: | MT53B256M64D2NW-062WT:C-ND |
Manufacturer Part#: |
MT53B256M64D2NW-062 WT:C |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 16G 1600MHZ FBGA |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (256M x 64) ... |
DataSheet: | MT53B256M64D2NW-062 WT:C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 16Gb (256M x 64) |
Clock Frequency: | 1600MHz |
Write Cycle Time - Word, Page: | -- |
Memory Interface: | -- |
Voltage - Supply: | 1.1V |
Operating Temperature: | -30°C ~ 85°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT53B256M64D2NW-062 WT:C belongs to the memory product family and its application field and working principle are worth noting. This product is a 256M x 32bit DDR3 SDRAM low power module, with a maximum speed of 1866MHz and a CAS latency of 10. This product is packaged in a small SO-DIMM form factor, which contains a total of 8 DDR3 devices. It is suitable for applications such as servers, notebooks, gaming PCs and other embedded devices.
The MT53B256M64D2NW-062 WT:C implements a very helpful power-saving feature. Its Dynamic Voltage and Frequency Scaling (DVFS) allows the system to rapidly switch between different frequency and voltage profiles. This feature allows the system to minimize power consumption and improve overall performance in embedded applications. Further, its Automatic Self Refresh (ASR) and Partial Array Self Refresh (PASR) features reduce power consumption by periodically refreshing only parts of the memory cells that need to be recharged, thus reducing power requirements.
The MT53B256M64D2NW-062 WT:C also utilizes the chipselect pin design. This feature enables users to control multiple units at once with fewer control pins required. Additionally, this product also features data and system preservation and thermal cutoff features, making it even more power efficient.
As the memory device, the MT53B256M64D2NW-062 WT:C works based on the Read/Write mode. During the read operation, the device will first receive an address signal from the processor, then it will start to read the data stored in the specified address in the memory cell. After the data is read out, it will output the data in the form of a data bus. For the write operation, the processor will first write the data to be written into the memory device, then the memory device will compare the data with the existing data in the designated address. If the data is different, it will update the data in the memory cell with the new data and store the new data into the corresponding address.
In addition, the MT53B256M64D2NW-062 WT:C also supports the ECC function, which can detect and correct data errors. When there is an error in the read data, it can automatically use the built-in error correction circuit to correct the detected data, achieving a performance improvement in the overall system.
The MT53B256M64D2NW-062 WT:C is an ideal solution for applications that need low power consumption and a compact form factor. With its low power requirements, high frequency and fast read/write times, it is suitable for use in a wide range of embedded applications such as gaming, server, notebook and other computation intensive applications.
The specific data is subject to PDF, and the above content is for reference
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