MT53D768M32D4CB-053 WT:C

Introduction to MT53D768M32D4CB-053 WT:C Memory

MT53D768M32D4CB-053 WT:C memory is a type of Dynamic Random Access Memory (DRAM) used as a memory module. It is manufactured by Mitsubishi Electric and is commonly used in a wide range of applications. It is a high-speed memory module, which allows data to be stored on the module and easily exchanged between devices. The MT53D768M32D4CB-053 WT:C is a 512 MB DRAM module, with the physical size of the module being 133 mm x 130 mm.

Features and Specifications of MT53D768M32D4CB-053 WT:C Memory

The MT53D768M32D4CB-053 WT:C memory module offers a wide range of features and specifications, allowing it to be effective in different applications. The module has a maximum operating temperature of 105°C, which means it can maintain its performance even in high-temperature environments. It also offers a cycle time of 16ns with a CAS Latency of 4, making it a high-speed memory module, allowing for rapid transfer of data between devices. The memory module also offers a low voltage of 2.5V, making it an energy-efficient solution for applications requiring a low power consumption.

Application Field of MT53D768M32D4CB-053 WT:C Memory

The MT53D768M32D4CB-053 WT:C memory module has a wide range of applications, ranging from servers, industrial PCs, and embedded systems, to digital video recording and medical equipment. It is typically used in applications that require high-speed data transfer and a low power consumption. It is also commonly used in embedded systems, as it can offer low data access times and low power consumption. In addition to this, the memory module can offer fast data transfer rates and high performance, due to its 16ns cycle time and CAS latency of 4.

Working Principle of MT53D768M32D4CB-053 WT:C Memory

The working principle of the MT53D768M32D4CB-053 WT:C memory module is based on DRAM technology. DRAM technology allows data to be stored in a device’s memory and accessed quickly and easily. Each memory cell contains capacitors, and the capacitors store the data. The capacitors must be periodically refreshed, as the data can be lost if the capacitors are not refreshed. This is done by reading the data from the cells and then rewriting it. As the capacitors are constantly being refreshed, data can be stored for prolonged periods of time.

Conclusion

The MT53D768M32D4CB-053 WT:C memory module is a type of DRAM memory, used in a wide range of applications. It offers a variety of features and specifications, making it suitable for a range of applications. Additionally, it is based on DRAM technology, which allows data to be stored and quickly accessed, making it an efficient solution for applications requiring a low power consumption.