| Allicdata Part #: | MT53D4D1ASQ-DCTR-ND |
| Manufacturer Part#: |
MT53D4D1ASQ-DC TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | LPDDR4 0 768MX64 FBGA QDP |
| More Detail: | Memory IC |
| DataSheet: | MT53D4D1ASQ-DC TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
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Memory plays a crucial role in computer science; it is used for the storage and processing of data for the smooth running of the digital system. Memory devices come in many different forms and sizes, one of the most common being the MT53D4D1ASQ-DC TR. An MT53D4D1ASQ-DC TR, or Memory Transceiver, is a single integrated circuit, usually mounted on a PCB, used to provide non-volatile storage and communication between various components of a digital system. It is primarily used in embedded applications such as instrumentation, medical imaging, industrial automation, automotive, and consumer electronics.
The MT53D4D1ASQ-DC TR is an advanced embedded memory device, featuring 64-Mbit static random access memory (S-RAM) and an 8-bit CMOS transceiver. This transceiver can operate at data rates of up to 1 Mbps, so it is ideal for use in high-speed applications. It also supports multiple I/O signals, allowing it to interface with various digital peripherals such as sensors, motors, and displays. The memory device is also compatible with a range of operating systems, including Windows, Linux, and Mac OS.
The MT53D4D1ASQ-DC TR’s static RAM (SRAM) and transceiver are both built on a single high-speed, low-power CMOS process, making it highly efficient. This combination of SRAM and transceiver allows for fast data retrieval and communication, reducing clock skews, power consumption, and system latency. The device can operate at temperatures from 0°C to 70°C and has an on-chip power management circuit to reduce power consumption in standby states. It is also highly reliable, with an industry standard mean time of failure of 200,000 hours.
The MT53D4D1ASQ-DC TR has a wide range of applications, from industrial automation to medical imaging. It can be used to store and transmit data such as instructions, images, and measurements. It is also used to implement non-volatile storage, providing a backup supply of data in the case of power failure or system shutdown. The device can also be used in real-time processing and communication systems, allowing it to quickly process and store data.
The MT53D4D1ASQ-DC TR works by using static RAM, which is composed of memory cells that store data in the form of binary bits. Each bit is stored in a transistor, which acts like a switch, allowing the RAM to store and retrieve data when necessary. The transceiver is used to communicate with other components, allowing data to be transferred between the memory device and other elements of the digital system.
The MT53D4D1ASQ-DC TR is a powerful, efficient, and reliable embedded memory device that can be used in a variety of applications in the industrial, medical, and consumer sectors. Its advanced SRAM and transceiver combination make it a great choice for high-speed, low-power applications requiring fast data retrieval and communication. With an industry standard mean time of failure of 200,000 hours, the MT53D4D1ASQ-DC TR can be relied upon for years of reliable service.
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| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT53B256M64D2NK-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZ FBGAS... |
| MT53D512M32D2DS-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53B512M64D4PV-062 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
| MT53D256M64D4NY-046 XT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D4D1ASQ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 0 768MX64 FBGA QDP... |
| MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
| MT53D4DHSB-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... |
| MT53D384M32D2DS-046 AUT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M16D1Z11MWC2 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... |
| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
| MT53D384M16D1NY-046 XT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 6G 384MX16 FBGAMem... |
| MT53D8DBNZ-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... |
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
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MT53D4D1ASQ-DC TR Datasheet/PDF