 
                            | Allicdata Part #: | MT53D384M32D2DS-053AAT:C-ND | 
| Manufacturer Part#: | MT53D384M32D2DS-053 AAT:C | 
| Price: | $ 0.00 | 
| Product Category: | Integrated Circuits (ICs) | 
| Manufacturer: | Micron Technology Inc. | 
| Short Description: | IC DRAM 12G 1866MHZ | 
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 12Gb (384M x 32) ... | 
| DataSheet: |  MT53D384M32D2DS-053 AAT:C Datasheet/PDF | 
| Quantity: | 1000 | 
| 1 +: | 0.00000 | 
| Series: | -- | 
| Part Status: | Obsolete | 
| Memory Type: | Volatile | 
| Memory Format: | DRAM | 
| Technology: | SDRAM - Mobile LPDDR4 | 
| Memory Size: | 12Gb (384M x 32) | 
| Clock Frequency: | 1866MHz | 
| Write Cycle Time - Word, Page: | -- | 
| Memory Interface: | -- | 
| Voltage - Supply: | 1.1V | 
| Operating Temperature: | -40°C ~ 105°C (TA) | 
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AAT:C (MT53D384M32D2DS-053) is a type of memory that is used widely across many industries. This type of memory is used to store data and is widely used in computers, phones, tablets, and other data processing devices. AAT:C memory has different forms and its many applications have made it versatile and widely used.
The most common form of AAT:C memory is dynamic random access memory (DRAM) which is a type of volatile memory that stores data using electrical circuits. DRAM is usually organized as a grid of cells composed of capacitors and transistors. Each cell stores one bit of data which is accessed by a row-column address. DRAM is circular and the data stored in each cell must be refreshed periodically in order to maintain data integrity. This refreshing process is called "cell tick" which is the most common form of AAT:C memory.
Another form of AAT:C memory is static random access memory (SRAM) which is a type of non-volatile memory that retains its data without the need for refreshing. SRAM is usually organized as a grid of cells composed of transistors and has a much higher speed compared to DRAM. SRAM has higher power consumption than DRAM because it continually consumes power while the data is being stored. SRAM is well-suited for applications where low latency and high bandwidth are desired.
Embedded flash memory (eFlash) is another form of AAT:C memory that is used in applications such as consumer electronics, automotive and industrial applications. eFlash memory is an electrically erasable programmable read-only memory (EEPROM) which is a type of non-volatile memory that can store data even after power is removed from the system. It is an ideal choice for systems that require frequent updating and greater storage capacity.
Asynchronous SRAM (ASRAM) is the last common form of AAT:C memory which is used for temporary data storage and caching. It is similar to SRAM but is asynchronous in nature, meaning that its access time is not dependent on the clock rate. This allows for faster access to data, making it useful in high-speed applications.
AAT:C memory is used in a wide variety of applications and has become a popular choice due to its versatility and wide range of capabilities. It offers a high degree of reliability and is capable of handling a large amount of data in a small amount of space. AAT:C memory is used in applications such as computer memory, phones, tablets, digital cameras, video game consoles and many more.
AAT:C memory is designed to function differently depending on the design and requirements of the application. It can be used for general storage, as a cache, or for specific tasks such as data processing or communications. As with other memory technologies, the working principles of AAT:C memory are based on cycling pulses through the circuitry, storing and retrieving data.
AAT:C memory is an important construction element for many applications and its versatility and high degree of reliability has made it a favorite for many users. Its various forms give users plenty of choice in terms of cost, performance and capacity. Whether it is used for general storage, caching or specific tasks, AAT:C memory is an essential tool in many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description | 
|---|
| MT53B256M64D2NK-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZ FBGAS... | 
| MT53D512M32D2DS-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... | 
| MT53B512M64D4PV-062 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... | 
| MT53D256M64D4NY-046 XT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... | 
| MT53D1G64D8SQ-053 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... | 
| MT53D4D1ASQ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 0 768MX64 FBGA QDP... | 
| MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... | 
| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... | 
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... | 
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... | 
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... | 
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... | 
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... | 
| MT53D4DHSB-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... | 
| MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... | 
| MT53D384M32D2DS-046 AUT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 2133MHZSDRAM ... | 
| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... | 
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... | 
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... | 
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... | 
| MT53D512M16D1Z11MWC2 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... | 
| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... | 
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... | 
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... | 
| MT53D384M16D1NY-046 XT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 6G 384MX16 FBGAMem... | 
| MT53D8DBNZ-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... | 
| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... | 
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... | 
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... | 
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... | 
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... | 
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... | 
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... | 
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... | 
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... | 
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