| Allicdata Part #: | MT53D384M32D2DS-053WT:CTR-ND |
| Manufacturer Part#: |
MT53D384M32D2DS-053 WT:C TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 12G 1866MHZ |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 12Gb (384M x 32) ... |
| DataSheet: | MT53D384M32D2DS-053 WT:C TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 12Gb (384M x 32) |
| Clock Frequency: | 1866MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is one of the most fundamental components of any computer, without which the entire machine ceases to function. Memory plays a crucial role in the functioning of computers, as it stores data for both short-term and long-term use. One type of memory in particular, the MT53D384M32D2DS-053 WT:C TR, is a dynamic RAM (DRAM) which is widely used in many applications due to its relatively low cost and higher speed. This article will discuss the application fields for this memory, as well as its working principle.
One of the primary applications for the MT53D384M32D2DS-053 WT:C TR is in embedded systems, including smartphones and tablets. This type of memory is often used in these applications because it is relatively inexpensive and provides a reliable way to store data quickly. In addition, this type of memory is often used in devices such as industrial control systems, digital cameras, and other electronic components.
Another application for this type of memory is in server systems, where the memory can handle large amounts of data without any hassles. It is especially useful in applications that require speed, such as audio or video streaming, or in applications where the data must remain secure. In these cases, the MT53D384M32D2DS-053 WT:C TR provides the faster access times and reliability that are needed.
The working principle of the MT53D384M32D2DS-053 WT:C TR is based on Dynamic Random Access Memory (DRAM). DRAM provides a combination of fast access and cost effectiveness, making it a preferred memory choice in many applications. The memory is organized into cells, which can be accessed individually or in blocks. Each cell contains an address line, a select line, a write line and a data line, which are used to transfer data between the memory cell and the rest of the memory. The memory cell uses capacitors to store data, which is erased when the memory cell is reset. The charge on the capacitors determines the “1” or “0” status of the cell.
The MT53D384M32D2DS-053 WT:C TR is designed for extremely fast refresh cycles, making it great for applications that require quick access to large amounts of data. It also does not require any refresh cycles when in standby mode. This reduces power consumption and increases battery life, making it a great choice for embedded systems. In addition, this type of memory also has weak bitline resistances and relatively weak array noise, which helps to reduce the problem of interference between adjacent cells.
In summary, the MT53D384M32D2DS-053 WT:C TR is a type of DRAM that is well suited for many types of applications. It is relatively low cost, fast, and reliable. It is used in embedded systems, server systems, and other electronic components, providing quick access to data in applications where speed is essential. In addition, its weak bitline resistances and low array noise help reduce interference between adjacent cells. Overall, the MT53D384M32D2DS-053 WT:C TR is an effective and reliable memory option for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT53B256M64D2NK-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZ FBGAS... |
| MT53D512M32D2DS-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53B512M64D4PV-062 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
| MT53D256M64D4NY-046 XT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D4D1ASQ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 0 768MX64 FBGA QDP... |
| MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
| MT53D4DHSB-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... |
| MT53D384M32D2DS-046 AUT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M16D1Z11MWC2 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... |
| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
| MT53D384M16D1NY-046 XT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 6G 384MX16 FBGAMem... |
| MT53D8DBNZ-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... |
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...
LPDDR3 6G DIE 192MX32Memory IC
IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...
IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...
IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...
IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
MT53D384M32D2DS-053 WT:C TR Datasheet/PDF