| Allicdata Part #: | MT53B2DADS-DC-ND |
| Manufacturer Part#: |
MT53B2DADS-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC SDRAM LPDDR4 16GBIT 256MX64 F |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC |
| DataSheet: | MT53B2DADS-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
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As one of the most commonly used types of RAM, Dynamic Random Access Memory, DRAM, is used to store digital data. It is a type of non-volatile memory, meaning it stores information written to it even when power is removed. The MT53B2DADS-DC is an enhanced version of the traditional DRAM, providing superior power performance and faster access to data. In this article, we\'ll explore the application field and working principle of the MT53B2DADS-DC.
Applications of MT53B2DADS-DC
The MT53B2DADS-DC is primarily used in consumer electronics, automotive systems, and in embedded industrial control systems due to its high density and low power consumption. These devices are able to store more data than regular DRAMs, while also consuming less power, making them ideal for mobile computing, embedded systems, and other power-efficient applications. The device is available in a variety of packages, including HSOP, TSOP and SDIP. The MT53B2DADS-DC is also frequently used in systems that require high reliability and low power consumption, such as battery-powered applications.
Due to its low power consumption, the MT53B2DADS-DC can run longer on battery power, making it ideal for use in applications such as handheld gaming consoles, digital cameras, and other portable electronics. As a result, it can be found in a wide variety of consumer electronics devices such as smartphones, tablets, digital cameras, and GPS receivers.
Working Principle of MT53B2DADS-DC
The MT53B2DADS-DC is a type of MOS memory device. MOS stands for Metal Oxide Semiconductor. This type of memory differs from conventional RAM devices in that it stores data by storing the charge in a transistor. This makes the device faster, more efficient, and more reliable than traditional DRAMs. The MT53B2DADS-DC can store up to 128MB of data. The access time of the chip is 6.67ns, which makes it suitable for high-speed applications.
The chip\'s speed is enhanced by its advanced data clock system. The device controls the timing of data transfers between the memory and the bus, based on a set of clock signals. This helps ensure that data is moved quickly and efficiently across the bus. The chip also features a fast write cycle time of 5.5µs, which enables faster data storage and retrieval speeds.
In order to reduce power consumption, the MT53B2DADS-DC utilizes a Clock Speed Control (CSC) system. This system monitors the power usage of the device, adjusting it automatically in order to reduce power consumption. This feature allows the device to be used in power-sensitive applications.
The MT53B2DADS-DC also includes error-correction circuitry to ensure that data is read and written correctly. This circuit monitors the accuracy of data transfers and can correct any errors that occur. This is essential for reliability and data security.
The MT53B2DADS-DC is designed for low power and high performance. Its low power consumption allows it to be used for longer time periods, making it ideal for use in battery-powered devices. Its fast access time and error-correction circuitry provide a reliable, high-speed memory solution for embedded industrial control systems and other applications.
The specific data is subject to PDF, and the above content is for reference
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| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
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| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
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| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
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| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
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MT53B2DADS-DC Datasheet/PDF