| Allicdata Part #: | MT53B4DANW-DC-ND |
| Manufacturer Part#: |
MT53B4DANW-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | SPECIAL/CUSTOM LPDDR4 |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC |
| DataSheet: | MT53B4DANW-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
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Memory is an important part of computer hardware, and the MT53B4DANW-DC is an example of a type of memory. This type of memory is a Multi-Bit Non-Volatile Dual In-line Memory Module, also known as NAND flash memory. The MT53B4DANW-DC is a memory device that is used in a variety of applications, from consumer electronics to automotive systems.
The MT53B4DANW-DC is a high-speed, low-power memory device designed for efficient storage and retrieval of data. It is capable of holding up to 4 bits of data in each cell, allowing for the storage of multiple pieces of data in a single chip. The device is designed for use in industrial, automotive, and consumer applications, as it can operate in temperatures ranging from -40°C to +85°C.
The principle behind the MT53B4DANW-DC is based on non-volatile memory. This type of memory is capable of storing data even when the device is turned off. This allows the memory to retain information even when the power is removed. Additionally, since it is non-volatile, the contents of the memory will not be lost due to accidental power outages.
The MT53B4DANW-DC is used in a range of applications, including digital audio recording and playback, digital signal processing, and digital media storage. It is also used in automotive systems to store data related to vehicle diagnostics and performance monitoring. In addition, the memory is used for secure data storage for critical applications, such as medical data storage and financial information storage.
The working principle behind the MT53B4DANW-DC is relatively straightforward. The memory device works by storing information in cells, which are small locations within the memory. Each cell can contain up to 4 bits of data. When data is requested, the device searches for the location of the data in the cells and then returns the data to the requesting application.
The MT53B4DANW-DC is a versatile memory device that is used in a wide range of applications. It is capable of quickly and securely storing data and retrieving data when needed. The device is also capable of operating in a wide range of temperatures, making it suitable for use in industrial and automotive environments. The memory is ideal for use in applications where efficient storage and retrieval of data are needed.
The specific data is subject to PDF, and the above content is for reference
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| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
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| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
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MT53B4DANW-DC Datasheet/PDF