MT53B4DBDT-DC TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MT53B4DBDT-DC TR is a general-purpose mobile DRAM, with a 4GB capacity. It is designed to meet the needs of a wide range of applications, including hand-held devices, servers, and other memory intensive applications.

MT53B4DBDT-DC TR is a direct-coupled DRAM memory, which means it is directly coupled to the memory bus and does not require a dedicated microcontroller. The DRAM memory is divided into four banks, each having a total capacity of 1GB. The DRAM memory uses a 16-bit data bus, giving a total capacity of 8192 bytes per bank.

The memory can be accessed using a simple memory read/write command from the microcontroller. The MT53B4DBDT-DC TR also supports auto-refresh and self-refresh operations for improved power efficiency.

The DRAM memory offers several advantages over other types of memory. It is fast and power-efficient, and offers excellent reliability, making it ideal for use in mobile and embedded applications.

In terms of power efficiency, the MT53B4DBDT-DC TR is much better than traditional SDRAM. The low power consumption makes it ideal for applications where power efficiency is critical. The MT53B4DBDT-DC TR also offers excellent endurance, with a read/write cycle time of only 10ns, which means it can read/write data up to 10000 times in a single cycle.

In terms of applications, the MT53B4DBDT-DC TR is well-suited for a wide range of memory intensive applications including hand-held devices, servers, and embedded systems. The MT53B4DBDT-DC TR is designed to support multiple high-speed data buses, making it ideal for applications that require high-speed data transfers.

The MT53B4DBDT-DC TR is also designed for use with multiple memory technologies, including DDR3, DDR4, and LPDDR3. The MT53B4DBDT-DC TR has a wide range of features, including an error-correcting code (ECC) to ensure data integrity, and an asynchronous reset function to ensure data recovery in the event of a power failure.

The MT53B4DBDT-DC TR is designed to meet the needs of a wide range of applications, and its power efficiency and reliability make it an ideal choice for embedded and mobile applications. The MT53B4DBDT-DC TR is a great choice for memory intensive applications, and its wide range of features make it a great choice for any application.

The specific data is subject to PDF, and the above content is for reference