
Allicdata Part #: | MT53B4DBNH-DC-ND |
Manufacturer Part#: |
MT53B4DBNH-DC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | LPDDR4 24G 384MX64 FBGA QDP |
More Detail: | SDRAM - Mobile LPDDR4 Memory IC |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
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Memory plays an important role in the performance and stability of the electrical system. The MT53B4DBNH-DC is one of the most advanced memory components, used in a variety of electrical applications. This article will explain the application field and working principle of the MT53B4DBNH-DC.
The MT53B4DBNH-DC is a synchronous static random-access memory (SRAM) component, specifically designed for industrial, automotive and military applications. This component offers high performance and reliability with improved functionality over previous SRAM models. It is ideal for applications requiring high speed, high data throughput and low latency.
The MT53B4DBNH-DC is a 4Mb DRAM component that can be used to store, cache or access data in multiple systems. It offers a single-cycle and multiple-cycle random-access memory that is ideal for applications that require a large memory capacity and latency needs. It is also designed for use in a variety of embedded systems, including embedded microcontrollers, digital signal processors (DSPs), FPGAs and gate arrays.
The MT53B4DBNH-DC is made up of an array of memory cells that is organized into a single chip. Each cell is organized into a row and column structure. Each row and column is controlled independently by an array of logic circuits to regulate read, write and refresh operations. This ensures a high level of performance and reliability.
The MT53B4DBNH-DC also features a fully synchronous and non-volatile interface for the transfer of data. It allows for low-latency data access and transfer. The device also features a low-voltage and low-current interface to reduce power consumption. The MT53B4DBNH-DC has also been designed with a built-in error-correction code (ECC) that can detect and correct up to 4-bit errors per memory cell.
The MT53B4DBNH-DC is suitable for a wide range of applications and has been designed for use in the following areas: industrial automation, automotive, medical, military, aerospace, communication and networking, and storage products.
The MT53B4DBNH-DC can be used in embedded systems as well as in general-purpose systems. It can be used to store programs, data, commands and other types of data. It is also used to cache data and ensure consistent data flow between memory and storage devices. The MT53B4DBNH-DC is also used to store and access large amounts of data for applications such as database management and data acquisition.
The MT53B4DBNH-DC uses a combination of logic circuits to enable read, write and refresh operations. These logic circuits enable data access and two-way data transfer. There are also other features such as error-correction, shadow registers and parity check that help to improve the performance and reliability of the system.
The MT53B4DBNH-DC is designed for high reliability, performance and speed. It is used in a variety of applications and is ideal for those that require high levels of data storage and access. The MT53B4DBNH-DC is ideal for embedded applications where low voltage and low current consumption is needed. The device also features a low-latency interface, error-correction, shadow registers and parity check, making it an ideal choice for a variety of environments.
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