MT53B512M32D2GZ-062 WT:B

MT53B512M32D2GZ-062 WT:B Application Field and Working Principle

The MT53B512M32D2GZ-062 WT:B is a dedicated memory module, which is one of the latest offerings from the memory product range of Micron. It is a 512 megabit (Mb), x32 (8 gigabyte (GB)) Double Data Rate Synchronous DRAM (DDR3 SDRAM) module confirming to the industry standard FB-DIMM (Fully Buffered DIMM) specification. This memory module falls into the category of DDR3 SDRAM, a type of computer memory, which is based on the double data rate, third era (DDR3) technology.

Application Field of MT53B512M32D2GZ-062 WT:B Memory Module

The MT53B512M32D2GZ-062 WT:B memory module is designed to meet the needs of a variety of application fields. One of its prominent uses is in server and workstation applications. The module provides 4 parallel channels and is capable of an 800MHz frequency. This makes it suitable to be used in any application requiring high memory bandwidth. It is utilized for server and workstation applications, including graphic memory-intensive applications such as web hosting, virtualization, and even gaming. Additionally, it is also used for applications such as enterprise-level storage, cloud applications, and mobile computing.

Working Principle of MT53B512M32D2GZ-062 WT:B Memory Module

The design of the MT53B512M32D2GZ-062 WT:B memory module follows the industry standard FB-DIMM specification. This means that each module comprises of several ranks of DRAM chips, each rank comprising of several DRAM memory chips with a total capacity of 512 megabit (Mb). Each DRAM chip is connected to an Ultra Buffered Link (UBL), which connects it to the fully buffaloed multi-dropped (FBM) bus. The FBM bus is connected to the memory controller through two XBUFFER chips. The DRAM chips, XBUFFERS, and the FBM are main components of the MT53B512M32D2GZ-062 WT:B memory module.

When a read or write request is made to the module, data is transferred from the system\'s memory controller unit (MCU) to the module\'s XBUFFER chips, which acts as a buffer between the module and the MCU. The XBUFFER chips then store the data in their memory cache and forward it to the DRAM chips over the UBL. The DRAM chips in turn forward the data to their respective ranks and the module is ready for another write request.

In order to ensure efficient data transfer, the MT53B512M32D2GZ-062 WT:B memory module employs an intelligent power savings mechanism, which reduces the power consumption of the module while maintaining data integrity. This feature allows the module to operate at low-power levels while still performing at peak performance levels. In addition, the module also employs an active refresh mechanism, which ensures that data is not lost even when the system is idle or in a low power state.

Conclusion

The MT53B512M32D2GZ-062 WT:B memory module is a versatile and efficient memory module designed to meet the needs of a variety of application fields. It combines the best of DDR3 SDRAM technology with intelligent power savings mechanisms, such as an active refresh mechanism, to ensure that data is safely stored and immediately available when needed. With its high memory bandwidth, it is well-suited for applications such as web hosting, virtualization, enterprise-level storage, cloud applications, mobile computing, and gaming.