MT53B768M32D4NQ-062 AIT:B TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	24Gb (768M x 32)
Clock Frequency:	1600MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-40°C ~ 95°C (TC)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to MT53B768M32D4NQ-062 AIT:B TR

MT53B768M32D4NQ-062 AIT:B TR is a Non-volatile SDRAM (NVSDRAM) memory chip developed by Samsung Electronics. It is manufactured in 65nm technology and is based upon 4Gb (512Mb) density. It is a high performance memory chip that enables the users to store and manage data at fast speeds and with increased reliability.

Application Field

MT53B768M32D4NQ-062 AIT:B TR memory chip can be found in a wide range of consumer electronic products. Its features and capabilities make it a suitable choice for applications that require a large memory capacity and high data storage performance. It can be used in consumer products such as notebooks, gaming machines, and High Definition (HD) televisions. It can also be found in commercial products such as servers and enterprise storage systems, as well as in industrial applications.

Features and Benefits of MT53B768M32D4NQ-062 AIT:B TR

The MT53B768M32D4NQ-062 AIT:B TR memory chip is one of the fastest memory chips available today. With a transfer speed of over 2Gbps, and a maximum write speed of 400Mbps, the chip is well-suited for applications that require rapid data management.The nonvolatile nature of the chip, combined with its low power consumption, makes it an ideal choice for mobile applications. It is also capable of withstanding extreme temperatures, making it an ideal choice for industrial applications.In addition, the MT53B768M32D4NQ-062 AIT:B TR memory chip offers improved reliability due to its error-correction capabilities. The chip is capable of correcting errors up to 8-bit errors, ensuring that any data stored on the chip is safe and secure.

Working Principle

MT53B768M32D4NQ-062 AIT:B TR memory chip works on a number of principles, including Nonvolatile Memory (NVM), Nonvolatile SRAM (NVSRAM), Error Correction Code (ECC) and Error Detection Code (EDC).The NVM principle is based on the use of a flash memory chip to store data without the need for power to maintain the data. This makes it perfect for high-demand applications such as servers and enterprise storage systems that require rapid data retrieval and long-term data storage.NVSRAM, or Non-volatile SRAM, is a memory technology that allows for rapid data reads and writes without power. This makes it perfect for data-heavy applications, such as gaming, where data is constantly changing.The ECC and EDC principles of the MT53B768M32D4NQ-062 AIT:B TR memory chip ensure that data is reliably stored and correctly retrieved. The chip uses an error detection and correction algorithm to detect and correct up to 8-bit errors, ensuring that data is stored and retrieved correctly, and free from errors.

Conclusion

MT53B768M32D4NQ-062 AIT:B TR is a high performance, reliable and efficient memory chip designed by Samsung Electronics. Its features and capabilities make it a suitable choice for applications that require a large memory capacity and high data storage performance. The non-volatile nature of the chip, combined with its low power consumption and error correction capabilities, makes it ideal for mobile, commercial and industrial applications. The chip works on a number of principles, including Non-volatile Memory, Non-volatile SRAM, Error Correction Code and Error Detection Code, all of which ensure that data is stored and retrieved reliably and with maximum efficiency.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description