| Allicdata Part #: | MT53D1024M32D4NQ-046WTES:D-ND |
| Manufacturer Part#: |
MT53D1024M32D4NQ-046 WT ES:D |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 32G 2133MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 32Gb (1G x 32) 21... |
| DataSheet: | MT53D1024M32D4NQ-046 WT ES:D Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Obsolete |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 32Gb (1G x 32) |
| Clock Frequency: | 2133MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -30°C ~ 85°C (TC) |
Description
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MT53D1024M32D4NQ-046 WT ES:D is a type of memory commonly used for popular applications. It is reliable, fast, and supports diverse clock frequencies. This type of memory is applicable for a wide range of applications such as high-performance computing, industrial control, medical equipment, consumer electronics, large-scale digitalization, etc. Furthermore, its optimal power efficiency and wide temperature ranges make it a great fit for many of these applications.
Application Field:
MT53D1024M32D4NQ-046 WT ES:D is mainly used in enterprise storage, cloud storage and server storage. It can greatly improve system performance and reliability while reducing cost. With its high speed operation, the memory can easily carry out complicated tasks such as heavy data processing, including audio, video, games and other large file operations. In addition, it is also frequently used in embedded systems, as its high performance and good price-performance ratio make it suitable for these applications.Working Principle:
MT53D1024M32D4NQ-046 WT ES:D adopts a multi-layer stack structure, with two layers of DRAM and two layers of NAND connected between them. The DRAM layer mainly functions to cache the data from the NAND layer. All the data is read from the NAND layer and stored in the DRAM layer. The data is then quickly accessed from the DRAM layer when needed. The NAND layer serves to store the data permanently, so that it can be accessed when required even after power off.The data is transmitted between the DRAM and NAND layers via a controller chip. The controller functions to process the necessary data and store it in the memory. It is responsible for data verification and error correction, thereby ensuring high speed and reliable operation.Conclusion:
MT53D1024M32D4NQ-046 WT ES:D is a high-performance, reliable and cost-effective memory solution that is applicable to many of today’s popular applications. Its wide range of features makes it a great choice for enterprise storage, cloud storage and server storage, embedded systems, and other digital applications. Additionally, its multi-layer stack structure and powerful controller chip ensure superior performance and data reliability.The specific data is subject to PDF, and the above content is for reference
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