| Allicdata Part #: | MT53D4DCNZ-DC-ND |
| Manufacturer Part#: |
MT53D4DCNZ-DC |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | SPECIAL/CUSTOM LPDDR4 |
| More Detail: | Memory IC |
| DataSheet: | MT53D4DCNZ-DC Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Active |
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Memory is an essential component of any computing system. Memory is used to store data and programs, which can be accessed and executed by the processor. It is an integrated device that can store, retrieve, manipulate and transfer data and programs. The MT53D4DCNZ-DC is one type of memory device that is widely used in applications ranging from consumer electronics to industrial automation. In this article, we will discuss the application field and working principle of the MT53D4DCNZ-DC.
Application Field
The MT53D4DCNZ-DC is a type of non-volatile memory device used for high-speed applications. It is well-suited for use in applications that require the data to be stored for long periods of time without becoming corrupted.It is commonly used for applications such as embedded controllers, game consoles, dynamic random access memory (DRAM) memory modules, digital cameras, digital media players, automotive systems, and smart phones. The device is capable of operating at clock speeds up to 200MHz and can store up to 4 gigabytes of data. The device is also compliant with the JEDEC standard for memory devices, making it an ideal choice for applications that require high data transfer rates and high speed operations.
Working Principle
The MT53D4DCNZ-DC uses static random access memory (SRAM) technology. The device consists of a number of memory cells, where each cell can store one bit of information. The cells are arranged in a regular pattern, and each bit is stored as a binary value (1 or 0). When the device is powered up, the cells are loaded with the data stored in them. The device also includes a row decoder and column decoder, which are used to select the specific cell whose contents are to be read or written.When a read operation is performed, the row decoder sends a signal to the memory cell that contains the desired data. The data is then transmitted through the column decoder to the processor. Similarly, when a write operation is performed, the row decoder sends a signal to the memory cell that is to be written to, and the data is transmitted through the column decoder to the memory cell.
Conclusion
The MT53D4DCNZ-DC is a type of non-volatile memory device that is commonly used for high-speed applications. The device makes use of SRAM technology, and is capable of storing up to 4 gigabytes of data. It is compliant with the JEDEC standard for memory devices and can operate at clock speeds up to 200MHz. With its high data transfer rates and fast operating speeds, the MT53D4DCNZ-DC is an ideal choice for embedded controllers, game consoles, dynamic random access memory (DRAM) memory modules and other applications requiring non-volatile memory.
The specific data is subject to PDF, and the above content is for reference
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| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
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| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
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MT53D4DCNZ-DC Datasheet/PDF