| Allicdata Part #: | MT53D512M32D2NP-046AATES:DTR-ND |
| Manufacturer Part#: |
MT53D512M32D2NP-046 AAT ES:D TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 16G 2133MHZ FBGA |
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 16Gb (512M x 32) ... |
| DataSheet: | MT53D512M32D2NP-046 AAT ES:D TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR4 |
| Memory Size: | 16Gb (512M x 32) |
| Clock Frequency: | 2133MHz |
| Write Cycle Time - Word, Page: | -- |
| Memory Interface: | -- |
| Voltage - Supply: | 1.1V |
| Operating Temperature: | -40°C ~ 105°C (TA) |
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Memory
MT53D512M32D2NP-046 AAT ES:D TR is a form of memory designed specifically for memory-intensive applications. It offers high-speed performance, low power consumption, and flexibility for a variety of applications. In this article, we’ll discuss the application field and working principle of MT53D512M32D2NP-046 AAT ES:D TR memory.
Application Field
MT53D512M32D2NP-046 AAT ES:D TR memory is ideal for applications requiring high density, high performance, and low power consumption. It is well suited for a wide range of applications, including:
• Embedded Systems: MT53D512M32D2NP-046 AAT ES:D TR memory is an ideal choice for embedded systems that require high performance, low power, and high density. The memory offers excellent performance for data-intensive tasks such as signal processing, multimedia, and networking.
• Industrial and Automotive Applications: MT53D512M32D2NP-046 AAT ES:D TR memory is designed for harsh environments and high temperatures, making it ideal for industrial and automotive applications. It is also resistant to temperature fluctuations and water splashes, making it suitable for outdoor applications.
• Network Communications: The memory is well suited for high-speed communication between devices. The memory is able to provide low latency communication which is advantageous for applications such as voice and video teleconferencing.
• Cloud Computing: MT53D512M32D2NP-046 AAT ES:D TR memory is ideal for cloud computing, where it is used to provide storage and computation resources to applications. It supports multiple parallel applications, making it suitable for a wide range of applications.
Working Principle
MT53D512M32D2NP-046 AAT ES:D TR memory is based on the DDR3 memory technology. The memory is organized into 512M (megabits) of 8-bit data chunks. Each 8-bit chunk is stored in a separate memory cell. Each memory cell is organized into banks and is programmed with specific timings and delay parameters that control the data access times between the memory and the system. The data transfer between the memory and the system is managed by an integrated address decoder.
The memory uses a patented dual-channel architecture which allows data to be sent and received concurrently on both channels. This allows for faster data transfer rates and higher data throughput. The memory also has an auto-refresh function which ensures that data stored in the memory remains valid.
The memory also has an integrated memory controller which simplifies the programming of the memory. The memory controller offers advanced features such as auto-detection and correction of errors, as well as power management features.
MT53D512M32D2NP-046 AAT ES:D TR memory is highly reliable due to its built-in error-correcting code (ECC). This allows the memory to detect and correct errors before they cause any problems. The memory also has an integrated thermal safety feature which helps the memory to operate in temperatures up to 85°C.
In conclusion, MT53D512M32D2NP-046 AAT ES:D TR memory is a high-speed, low power and high-density form of memory designed specifically for memory intensive applications. It is well suited for a wide range of applications including embedded systems, industrial and automotive applications, network communications, and cloud computing. The memory utilizes advanced features such as dual-channel architecture and an integrated memory controller which allows for improved performance and reliability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT53D512M32D2DS-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53B512M64D4PV-062 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... |
| MT53D256M64D4NY-046 XT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D1G64D8SQ-053 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D4D1ASQ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 0 768MX64 FBGA QDP... |
| MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... |
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... |
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... |
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... |
| MT53D4DHSB-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... |
| MT53D384M32D2DS-046 AUT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 2133MHZSDRAM ... |
| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... |
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... |
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... |
| MT53D512M16D1Z11MWC2 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... |
| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... |
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... |
| MT53D384M16D1NY-046 XT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 6G 384MX16 FBGAMem... |
| MT53D8DBNZ-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... |
| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... |
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... |
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... |
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... |
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... |
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... |
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... |
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... |
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... |
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MT53D512M32D2NP-046 AAT ES:D TR Datasheet/PDF