MT53D512M32D2NP-046 AUT:D TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	16Gb (512M x 32)
Clock Frequency:	2133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-40°C ~ 125°C (TC)

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Introduction to Memory

Memory is an essential component of a computer system and consists of hardware that stores instructions and data for use in a variety of applications. It is a form of data storage used to store and retrieve information from memory. Memory is an important part of a computer system, as it can be used to store instructions, data, and application states. It is composed of a series of chips and modules that store data and instructions for use by the processor. Memory systems generally differ in terms of their capacity, speed, and cost.

MT53D512M32D2NP-046 AUT:D TR

MT53D512M32D2NP-046 AUT:D TR is a type of Random Access Memory (RAM), serial presence detect (SPD) used in mobile and embedded applications. It is a 512Mb SDRAM memory module based on DDR3 SDRAM technology. It provides high-speed data transfer with a range of transfer speeds from 800MHz to 1,333MHz. The module is suitable for a variety of embedded and mobile systems where size and power efficiency are important factors for performance. Its advanced low-power features include low-power-down states, deep-power-down states, and automatic power-saving features. It features an approximate power efficiency of up to 40% compared to other DDR3 SDRAMs, making it suitable for power-sensitive applications.

Application Field and Working Principle of MT53D512M32D2NP-046 AUT:D TR

The MT53D512M32D2NP-046 AUT:D TR is used in embedded and mobile applications where size and power efficiency are important factors. It is used in systems such as computer system appliances, gaming consoles, automotive infotainment systems, tablets, and smart phones. The memory module is designed to be compatible with current and future DDR3-based platforms. Its high-performance features and superior reliability make it an ideal choice for embedded and mobile applications.The MT53D512M32D2NP-046 AUT:D TR is a DRAM based on the DDR3 SDRAM technology. It has a high memory capacity, fast access times, and low power consumption. It utilizes a double data rate (DDR) architecture which enables data transfers of twice the rate of single data rate DRAM. The memory module is based on a synchronous DRAM architecture with an internal clock. It has a burst length of 8 for reads and writes and a burst type of sequential for reads and interleaved for writes. The memory module uses an “on-the-fly” data scrambling and error correction code (ECC) mechanism to ensure the integrity of memory data. The module has a data bus width of 64-bits wide and a maximum I/O data transfer rate of up to 1,333MHz.In summary, the MT53D512M32D2NP-046 AUT:D TR is a high-performance and cost-efficient random access memory (RAM) module designed for use in embedded and mobile applications. It is based on the DDR3 SDRAM technology, has a high memory capacity, fast access times, and low power consumption. It utilizes a double data rate architecture for fast data transfers and features a burst length of 8 for reads and writes and a burst type of sequential for reads and interleaved for writes. The “on-the-fly” data scrambling and error correction mechanism ensures the integrity of memory data. The module has a data bus width of 64-bits wide and a maximum I/O data transfer rate of up to 1,333MHz.

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