MT53D512M32D2NP-046 WT ES:E TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	16Gb (512M x 32)
Clock Frequency:	2133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 85°C (TC)

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MT53D512M32D2NP-046 WT ES:E TR Application Field and Working Principle

Introduction to Memory

Memory is an important part of any computer. It is an integrated circuit that stores information digitally, allowing the user to perform tasks more quickly and accurately. Different types of memory are used for different purposes, depending on the speed and storage capacity needed. Memory is used in many applications from PCs to video game systems, server farms, and medical imaging systems.

MT53D512M32D2NP-046 WT ES:E TR

MT53D512M32D2NP-046 WT ES:E TR is a type of memory produced by Toshiba that is used for embedded systems. It is a Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM), which is based on the DDR2 standard. It has a 16-bit organization and is based on the Multi-Chip-Module style. The memory chip has 512 Mbit capacity, which is equivalent to 64 megabytes. It has a maximum clock rate of 66 MHz, which allows it to achieve up to 5.28 gigabytes per second transfer rates.

Application Field

MT53D512M32D2NP-046 WT ES:E TR is used in a variety of embedded systems applications. It is used in industrial automation and control systems, such as programmable logic controllers (PLCs). It is also used in automobiles, navigation systems, medical imaging systems, gaming consoles, and digital signage. Additionally, it is used in telecom infrastructure, such as set-top boxes, digital video recorders, and remote access servers.

Working Principle

MT53D512M32D2NP-046 WT ES:E TR is based on the DDR2 standard, which uses double data rate (DDR) technology. This type of memory chip is composed of a number of individual memory cells, each storing one bit of data. The memory controller reads and writes data to the memory cells by sending an address signal on the address bus. The memory controller then reads and writes data and sends the corresponding data back on the data bus. When the memory receives or transmits data, it sends a strobe signal, allowing the memory controller to synchronize with the memory. When a memory transfer occurs, data is transferred to and from the memory cells in a series of read and write operations. Each operation consists of a row address and column address followed by a read or write command, as well as the data being read or written. Read operations return information that is already stored in the memory cells, while write operations store data in the memory cells. The read and write operations occur on the same clock cycle, allowing for faster data transfers. This also helps reduce power consumption since the memory is only in use when data needs to be transferred. Furthermore, a DDR2 memory system can transfer twice the amount of data per cycle as a DDR memory chip, allowing for higher transfer rates and higher memory bandwith.

Conclusion

MT53D512M32D2NP-046 WT ES:E TR is a type of memory chip used in embedded applications. It is based on the DDR2 technology, allowing it to achieve higher transfer rates and lower power consumption. It is commonly used for industrial automation and control systems, automobiles, medical imaging systems, gaming consoles, and digital signage. It works by reading and writing data from and to the memory cells, transferring data on the address and data buses, and sending a strobe signal to the memory controller.

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