MT53D512M64D4CR-053 WT ES:D Allicdata Electronics
Allicdata Part #:

MT53D512M64D4CR-053WTES:D-ND

Manufacturer Part#:

MT53D512M64D4CR-053 WT ES:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 32G 1866MHZ FBGA
More Detail: SDRAM - Mobile LPDDR4 Memory IC 32Gb (512M x 64) ...
DataSheet: MT53D512M64D4CR-053 WT ES:D datasheetMT53D512M64D4CR-053 WT ES:D Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: --
Memory Interface: --
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Description

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Memory is a fundamental part of computing and critical for the operation of electronic devices. The MT53D512M64D4CR-053 WT ES:D memory is a dynamic random access memory (DRAM) chip, commonly used in computers, servers, and industrial applications. In this article, we\'ll look at the application field and working principle of the MT53D512M64D4CR-053 WT ES:D memory.

Application Fields:

The MT53D512M64D4CR-053 WT ES:D DRAM chips are mainly used in computer systems. The DRAM chips are used as the main memory for computers and are also used in some industrial applications. The DRAM chips are commonly used in laptops, desktop systems, servers, and embedded systems.

The MT53D512M64D4CR-053 WT ES:D DRAM chips are designed for use in high-performance systems. The chips are designed for high-bandwidth applications, allowing for faster data transfer rates and higher performance. The chips are also designed for low-power consumption, making them ideal for use in mobile devices and embedded systems.

Working Principle

The MT53D512M64D4CR-053 WT ES:D DRAM chips are composed of multiple DRAM cells, each containing a single capacitor and a single transistor. The DRAM cell is connected to the system\'s address and data buses, allowing for data to be stored and retrieved. The cell can store one bit of data, which is either a 0 or 1. When the data is retrieved, the state of the capacitor is used to determine the value of the data.

When data is written to the DRAM cell, a charge is applied to the capacitor, which is then stored. To read the data from the cell, the voltage of the capacitor is measured, with a low voltage indicating a 0 and a high voltage indicating a 1. The data can be written or read quickly, making the DRAM chip fast and allowing for high-bandwidth applications.

The DRAM cell can also be refreshed periodically, to ensure that the data stored in the cell is not lost. This is done by cycling the voltage of the capacitor, as if it was being written from 0 to 1. This process is used to maintain the integrity of the data stored in the DRAM cell.

Conclusion

The MT53D512M64D4CR-053 WT ES:D DRAM chips are a versatile and powerful memory solution, commonly used in a variety of applications. The DRAM chips are designed for high-performance applications and low-power consumption, making them ideal for a wide range of applications. The DRAM chips are also designed to allow for fast data transfer rates, making them well suited for high-bandwidth applications. Understanding the application fields and working principles of the MT53D512M64D4CR-053 WT ES:D memory can help you choose the best memory solution for your needs.

The specific data is subject to PDF, and the above content is for reference

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