 
                            | Allicdata Part #: | MT53D768M32D4BD-053WT:C-ND | 
| Manufacturer Part#: | MT53D768M32D4BD-053 WT:C | 
| Price: | $ 0.00 | 
| Product Category: | Integrated Circuits (ICs) | 
| Manufacturer: | Micron Technology Inc. | 
| Short Description: | IC DRAM 24G 1866MHZ FBGA | 
| More Detail: | SDRAM - Mobile LPDDR4 Memory IC 24Gb (768M x 32) ... | 
| DataSheet: |  MT53D768M32D4BD-053 WT:C Datasheet/PDF | 
| Quantity: | 1000 | 
| 1 +: | 0.00000 | 
| Series: | -- | 
| Part Status: | Active | 
| Memory Type: | Volatile | 
| Memory Format: | DRAM | 
| Technology: | SDRAM - Mobile LPDDR4 | 
| Memory Size: | 24Gb (768M x 32) | 
| Clock Frequency: | 1866MHz | 
| Write Cycle Time - Word, Page: | -- | 
| Memory Interface: | -- | 
| Voltage - Supply: | 1.1V | 
| Operating Temperature: | -30°C ~ 85°C (TC) | 
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Memory
MT53D768M32D4BD-053 WT:C is a type of memory developed by Micron Technology Inc. It is primarily used as a storage medium for digital data. It stores digital information in a binary format, meaning that each bit of data is either ‘1’ or ‘0’. It is important to note that this type of memory is not the same as Random Access Memory (RAM). RAM is a type of memory that is used by a computer to store data temporarily and can be changed or deleted quickly. In contrast, MT53D768M32D4BD-053 WT:C is a form of non-volatile memory and can store data for long periods of time without power. Thus, it is referred to as \'flash\' memory.
The primary application area of MT53D768M32D4BD-053 WT:C is consumer electronics. This memory is used in everything from digital cameras, music players, and mobile phones to personal computers. Due to its non-volatile nature, it is often used to store user-configurable settings and data, such as the time and date settings of a digital watch. Other applications of this memory include industrial products, medical devices, and gaming consoles.
The working principle of MT53D768M32D4BD-053 WT:C memory is based on the interaction of electrons, electric fields, and gate oxide layers. Data is stored and retrieved as a charge in a floating gate that is present in a cell. The gate oxide layer prevents electrons from passing through the cells. The control gate of the cell is programmed in such a way that it controls the threshold voltage at which electrons can flow between the floating gate and the control gate. In this manner, information is stored and retrieved from the floating gate.
MT53D768M32D4BD-053 WT:C memory is reliable and fast; it offers high data transfer rates and can withstand harsh conditions. It also has low power consumption, making it ideal for use in mobile devices. Furthermore, because of its non-volatile nature, it is used to store critical application data, configuration files, and customer-specific settings.
In conclusion, MT53D768M32D4BD-053 WT:C is a type of flash memory that is widely used in consumer electronics and other applications. Its working principle is based on the interaction of electrons, electric fields, and gate oxide layers. It is reliable and fast, and has low power consumption, making it ideal for use in mobile devices and other applications where a constant source of data needs to be maintained.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description | 
|---|
| MT53B256M64D2NK-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1866MHZ FBGAS... | 
| MT53D512M32D2DS-046 AUT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... | 
| MT53B512M64D4PV-062 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D512M32D2DS-053 AIT:D | Micron Techn... | -- | 1000 | IC DRAM 16G 1866MHZSDRAM ... | 
| MT53D256M64D4NY-046 XT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... | 
| MT53D1G64D8SQ-053 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... | 
| MT53D4D1ASQ-DC TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 0 768MX64 FBGA QDP... | 
| MT53B512M64D4PV-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... | 
| MT53B256M64D2TP-062 XT ES:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZ FBGAS... | 
| MT53B128M32D1NP-062 WT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G 1600MHZSDRAM -... | 
| MT53B512M64D4NW-062 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZSDRAM ... | 
| MT53D1024M32D4NQ-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... | 
| MT53D384M32D2DS-053 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... | 
| MT53D1024M32D4DT-046 AAT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZ FBGAS... | 
| MT53D4DHSB-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... | 
| MT5355-UV | Marktech Opt... | 20.86 $ | 40 | EMITTER UV 357NM 5MM RADI... | 
| MT53D384M32D2DS-046 AUT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 2133MHZSDRAM ... | 
| MT53D512M64D4NZ-046 WT:E | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... | 
| MT53B768M32D4NQ-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1600MHZ FBGAS... | 
| MT53D256M64D4NY-046 XT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZSDRAM ... | 
| MT53D512M64D4NW-046 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 2133MHZSDRAM ... | 
| MT53D512M16D1Z11MWC2 | Micron Techn... | 0.0 $ | 1000 | LPDDR4 8G DIE 512MX16Memo... | 
| MT53B512M64D4NK-062 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D768M32D4CB-053 WT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 24G 1866MHZ FBGAS... | 
| MT53D768M64D8NZ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... | 
| MT53D1024M64D8NW-046 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 2133MHZ FBGAS... | 
| MT53D384M16D1NY-046 XT ES:D | Micron Techn... | 0.0 $ | 1000 | LPDDR4 6G 384MX16 FBGAMem... | 
| MT53D8DBNZ-DC | Micron Techn... | 0.0 $ | 1000 | SPECIAL/CUSTOM LPDDR4Memo... | 
| MT53D256M64D4KA-046 XT:ES B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 2133MHZ FBGAS... | 
| MT53D768M64D4SQ-046 WT ES:A TR | Micron Techn... | 0.0 $ | 1000 | LPDDR4 48G 768MX64 FBGA W... | 
| MT53B512M64D4NJ-062 WT ES:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D384M32D2DS-053 AAT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... | 
| MT53D1024M64D8WF-053 WT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1866MHZSDRAM ... | 
| MT53D384M32D2DS-053 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 12G 1866MHZSDRAM ... | 
| MT53B512M64D4NZ-062 WT ES:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53D1024M64D8NW-062 WT ES:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64G 1600MHZ FBGAS... | 
| MT53D512M64D4CR-053 WT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1866MHZ FBGAS... | 
| MT53B512M64D4NW-062 WT ES:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 32G 1600MHZ FBGAS... | 
| MT53B256M64D2TG-062 XT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 16G 1600MHZSDRAM ... | 
| MT53D768M64D8SQ-046 WT:E TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 48G 2133MHZ FBGAS... | 
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