MT8HTF12864AY-40ED1

Series:	--
Part Status:	Discontinued at Digi-Key
Memory Type:	DDR2 SDRAM
Memory Size:	1GB
Speed:	400MT/s
Package / Case:	240-UDIMM

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Introduction

The MT8HTF12864AY-40ED1 modules are an 8-bit, 4-row memory technology with great potential to become the standard for a wide range of applications. From batteries for wearables and other portable devices, to emerging applications in cloud-based systems, the module offers current-saving performance and stability. The following article discusses the application fields and working principle of the MT8HTF12864AY-40ED1 modules.

Application Field and Working Principle of the MT8HTF12864AY-40ED1 Modules

The MT8HTF12864AY-40ED1 memory module is designed to provide the best possible performance with minimal power consumption for applications requiring a high level of system stability. The 8-bit, 4-row DRAM cell design allows for the highest density and performance among DRAMs. Its 2,048 byte addressable memory width and 40-bit addressing make it optimal for applications that require a large amount of data storage. The module has a fixed refresh frequency of 500Hz, making it ideal for applications with high refresh rates, such as wearable devices, or other mobile devices.The MT8HTF12864AY-40ED1 module utilizes an innovative write-protect register that reduces write operations, thereby providing improved power efficiency and superior system stability. It also has a synchronous power handshaking protocol, allowing it to adjust the power signal according to the current state of the system. This helps to optimize power efficiency and system stability, and can be easily adjusted to suit the requirements of the application.The module also utilizes a low voltage reminder feature, which helps to avoid overloading the system with too much voltage. This feature is ideal for applications that require accurate power regulation, such as those in automotive and embedded systems. In addition, the module is built with advanced stability technology, which provides exceptional reliability and durability.

Conclusion

The MT8HTF12864AY-40ED1 memory module offers high performance and current-saving benefits for applications in wearables, cloud-based systems, automotive and embedded systems, and other mobile devices. Its 8-bit, 4-row DRAM cell design provides the highest density and performance, while the write-protect register, synchronous power handshaking protocol, and low voltage reminder feature all contribute to its improved power efficiency and superior system stability. With its advanced stability technology, the MT8HTF12864AY-40ED1 module is an excellent choice for applications that require reliable and efficient memory.

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