MT8HTF6464AY-53EB9

MT8HTF6464AY-53EB9 is a Dynamic Random Access Memory (DRAM) module released by Micron Technology. This DRAM module has a variety of applications in consumer electronics, such as PCs and tablets, as well as in server and networking applications, where they provide temporary storage for data and commands. The MT8HTF6464AY-53EB9 module is a Dual-Inline Memory Module (DIMM), which consists of two 64-bit data interfaces and 24 lines of address and control signals.

The working principle of a DRAM module is fairly simple. To perform a read/write operation, a controller sends \'address\' and \'command\' signals to the module. Reading data requires the \'address\' signals to find the target memory cell. Writing data is similar, except that it also requires \'data\' signals to be sent, which will write into the target memory cell.

MT8HTF6464AY-53EB9 is designed to be used in high-performance applications that require high-speed memory access. It supports a maximum data transfer rate of 833 Megatransfers per second (MT/s). It is also designed to operate at extremely low power consumption, making it ideal for battery-operated devices. It also offers error-correcting code (ECC) memory protection, creating an additional layer of data-protection for sensitive applications.

The MT8HTF6464AY-53EB9 module is a versatile DRAM module that can be used in a variety of applications. In consumer electronics, it can be used in portable computers, tablets, and desktop PCs for memory expansion. It can also be used in networking and server applications, providing dedicated storage for data and instructions. Additionally, it can be used in embedded systems, to provide high-speed memory access and data protection.

The MT8HTF6464AY-53EB9 module is a reliable and durable memory module that provides high-speed data transfer and reliable data protection. With its low power consumption and error-correcting code, it is an excellent choice for a variety of applications.