MT8HTF12864AY-53ED1

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The MT8HTF12864AY-53ED1 is a type of memory module used in advanced computing applications. It is a DRAM (dynamic random access memory) module with a capacity of 128 MB of non-volatile data storage. This type of memory module is used in applications such as high-end servers, workstations, distributed computing clusters, storage arrays, embedded systems, and supercomputers.

The MT8HTF12864AY-53ED1 is a synchronous DRAM module that uses double data rate technology. This means that it can transfer data twice as fast compared to a single data rate module. It also has an (EDC) error detection code and an error correction code (ECC) to ensure the reliability and accuracy of the data stored in the module.

The module also features a maximum output frequency of 200 MHz and an up to seven CAS latency. This means that the module can be used to quickly transfer larger amounts of data with high accuracy. It also has a burst length of 4 and a maximum row count of 8. This makes it an ideal choice for applications where fast data throughput is critical.

In addition to the physical features, the MT8HTF12864AY-53ED1 has advanced memory technologies such as advanced write allocation, write combining, and write combining queues. These features enable the module to optimize the data storage and retrieval performance. The module also has an auto refresh function and a ‘stop clock feature’ that allows it to save power when not in use.

The MT8HTF12864AY-53ED1 is an ideal memory module for high-end applications such as servers, workstations, embedded systems, and supercomputers. It is highly reliable and offers great performance while also being energy-efficient. This makes it a great choice for any application that requires high data throughput and accuracy.

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