MT8HTF3264AY-40EB3 Allicdata Electronics
Allicdata Part #:

MT8HTF3264AY-40EB3-ND

Manufacturer Part#:

MT8HTF3264AY-40EB3

Price: $ 64.09
Product Category:

Memory Cards, Modules

Manufacturer: Micron Technology Inc.
Short Description: MODULE DDR2 SDRAM 256MB 240UDIMM
More Detail: Memory Module DDR2 SDRAM 256MB 400MT/s 240-UDIMM
DataSheet: MT8HTF3264AY-40EB3 datasheetMT8HTF3264AY-40EB3 Datasheet/PDF
Quantity: 1000
100 +: $ 58.25340
Stock 1000Can Ship Immediately
$ 64.09
Specifications
Series: --
Part Status: Obsolete
Memory Type: DDR2 SDRAM
Memory Size: 256MB
Speed: 400MT/s
Package / Case: 240-UDIMM
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MT8HTF3264AY-40EB3 specifically belongs to a type of Dynamic Random Access Memory (DRAM) referred to as DDR3 SDRAM. The combination of the initials DDR3 and SDRAM is meant to indicate that this specific memory module follows the revised SDRAM technology while conforming to the DDR3 standard. In terms of the application field and working principle, this type of Memory Module is optimally suited for high-performance computing, thereby meeting the more exacting requirements for data transfer rate, data bandwidth, and power usage in comparison to earlier SDRAM technologies.

From the application point of view, MT8HTF3264AY-40EB3 DDR3 SDRAM functions as the main storage for a range of devices such as personal computers (PCs) and production servers, both of which require high data throughput and capacity for efficient operation. It is also used in other advanced systems where larger memory space is necessary, such as in programmable logic controllers (PLCsE) and telecom devices. Furthermore, DDR3 SDRAM also offers the right combination of speed and power efficiency necessary for heavy graphics processing applications. In a nutshell, MT8HTF3264AY-40EB3 is an ideal Memory Module for all sorts of intensive computing operations where the need for high data bandwidth and power efficiency is paramount.

In terms of working principle, the MT8HTF3264AY-40EB3 uses double-data-rate synchronous dynamic random-access memory (DDR SDRAM) architecture. It requires a double data transfer cycle to arrive at the peak of its bandwidth. This synchronous DRAM technology was particularly designed to enhance data throughput, thus significantly boosting the rate of computing operations for faster applications. Under this architecture, memory access is managed by a controller which is responsible in coordinating the timing operations, such as memory access and data transfer, between the memory controller and the memory module. This architecture also reduces the need for more power by allowing the same amount of work to be performed using less amount of energy.

The technology behind the MT8HTF3264AY-40EB3 Memory Module is ideal for high-end computing appliances, such as desktops, workstations, laptops and servers. This Memory Module is particularly designed to reduce power usage while still accurately operating at peak speeds for maximum performance. It is an excellent choice for applications that require intensive data bandwidth and power efficiency, such as in gaming consoles, broadcast media, industrial controllers, electronic devices, and even aircrafts. To sum up, MT8HTF3264AY-40EB3 is a perfect companion for those who require high-speed data transfer and large-capacity memory.—to make computing operations smoother, faster, and more efficient.

The specific data is subject to PDF, and the above content is for reference

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