Allicdata Part #: | MUR30060CTRGN-ND |
Manufacturer Part#: |
MUR30060CTR |
Price: | $ 39.59 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE MODULE 600V 300A 2TOWER |
More Detail: | Diode Array 1 Pair Common Anode Standard 600V 300A... |
DataSheet: | MUR30060CTR Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 35.62570 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io) (per Diode): | 300A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 100A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 90ns |
Current - Reverse Leakage @ Vr: | 25µA @ 50V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Twin Tower |
Supplier Device Package: | Twin Tower |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MUR30060CTR is a package of sixty 200V, 3.0A, ultra-fast rectifier diodes in a single array. This type of diode is suitable for a variety of applications, such as automotive systems, switch power supplies, and voltage regulator modules. It is also a great choice for high-current efficiency applications, as well as low-voltage applications.
One of the advantages of using MUR30060CTR rectifiers is their ultra-fast response time. This makes them suitable for high-speed switching applications, such as AC-DC converters. Their low forward voltage drop, as well as their ultra-fast reverse recovery time, make them a good choice for high efficiency applications. Furthermore, their extremely low reverse leakage current assures a clean, precise output signal.
The working principle of MUR30060CTR rectifiers is based on the principle of PN junction. A PN junction is formed by connecting a positively doped region (N-type material) and a negatively doped region (P-type material) together. When a forward bias is applied to the diode, the negatively doped material in the depletion region allows charge carriers to flow from the N-type material to the P-type material. This creates a current in the forward direction, thus allowing the diode to conduct current.
When a reverse bias is applied to the diode, the adjacent P-type and N-type materials are attracted to each other and form a barrier. This barrier prevents the flow of charge carriers and results in a higher reverse breakdown voltage. This voltage is the voltage that is applied before the diode starts conducting current in the reverse direction.
The MUR30060CTR rectifiers are engineered using high-quality materials and processes. This ensures that they have excellent thermal, mechanical, and electrical properties. They also have a high surge current capability and are very resistant to mechanical shock and vibration.
The MUR30060CTR rectifiers are a great choice for many applications, as they offer high-speed switching and high efficiency for a wide range of operating conditions. Their compact size and lightweight construction make them very convenient to use. Furthermore, their low forward voltage drop, low reverse leakage current, and high surge current capability make them a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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