MUR360SB R5G

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	50ns
Current - Reverse Leakage @ Vr:	10µA @ 600V
Capacitance @ Vr, F:	40pF @ 4V, 1MHz
Mounting Type:	Surface Mount
Package / Case:	DO-214AA, SMB
Supplier Device Package:	DO-214AA (SMB)
Operating Temperature - Junction:	-55°C ~ 175°C

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The MUR360SB R5G is a rectifier diode designed for use in systems that require high efficiency and reliability. This diode is capable of withstanding extreme temperatures, and is widely used in a variety of applications due to its low power consumption and excellent tolerance to shock and vibration. The MUR360SB R5G diode has a single cathode and anode, which allows it to be easily mounted on standard PCB boards. The cathode and anode are connected together by a single lead, allowing for easy installation and replacement. This diode utilizes a unique junction design that allows it to handle high-frequency, high-amperage, and low on-state voltage drop applications. The MUR360SB R5G diode is typically used in rectifier and linear regulator systems, including reverse polarity protection, switching, motor speed control, voltage regulator circuits, and solar cell applications. It is also commonly used in power supplies, motor control drives, DC-DC convertors, TV sets, and inverter systems.The MUR360SB R5G diode is a rectifier diode, which means that it is designed to convert alternating current (AC) into direct current (DC). By using a diode bridge rectifier, the diode rectifies AC electricity from the source, such as from a wall outlet or from a battery. The rectified direct current can then be used to power any DC device, such as a motor or a light bulb.The working principle of the MUR360SB R5G diode is based on the PN junction process. A PN junction is a type of semiconductor junction where two different types of semiconductor material are created by doping, at the atomic level. The two materials, or semiconductors, are arranged together so that one is slightly negatively charged and the other is slightly positively charged. When the negative and positive charges interact, they create a potential barrier, or junction. When a potential difference is applied across the junction, the PN junction will pass current in a way which depends on the material. In the case of the MUR360SB R5G, the PN junction will conduct current only if the voltage is higher than its forward voltage drop. The MUR360SB R5G diode is suitable for a wide array of applications due to its low power consumption, high efficiency, and excellent reliability. This diode can be used in motor control drive systems, solar cells, power supplies, DC-DC convertors, and any other application where a reliable, efficient rectifier diode is desired. With its robust junction design, the MUR360SB R5G diode is capable of handling high frequencies, high amperage, and low on-state voltage drop.

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