MUR4L60 B0G Allicdata Electronics
Allicdata Part #:

MUR4L60B0G-ND

Manufacturer Part#:

MUR4L60 B0G

Price: $ 0.17
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 4A DO201AD
More Detail: Diode Standard 600V 4A Through Hole DO-201AD
DataSheet: MUR4L60 B0G datasheetMUR4L60 B0G Datasheet/PDF
Quantity: 1000
4000 +: $ 0.15078
Stock 1000Can Ship Immediately
$ 0.17
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 175°C
Description

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The MUR4L60B0G is a single rectifier diode with a maximum current rating of 4.6A and a maximum voltage rating of 600V. It is an ideal choice for use in rectifying power over AC lines. The device is designed to operate in the temperature range -55C to 150C.

The MUR4L60B0G is often used in power applications such as UPSs, solar inverters, and power supplies. It can help prevent the negative effects of voltage spikes, EMI emissions, and overheating of sensitive components. Because of its low-leakage current and fast turn-off time, it is suitable for automotive and high-voltage switching applications. The device is also RoHS-compliant, making it an eco-friendly choice for your application needs.

Working Principle of the MUR4L60B0G

The working principle of the MUR4L60B0G is fairly straightforward. This single rectifier diode is designed to rectify the alternating current (AC) currently flowing through the lines. It helps to reduce the total voltage and current as well, while protecting sensitive components from fluctuating input current.

The MUR4L60B0G uses a p-n junction design, which has two layers: the lightly doped n-layer and the heavily doped p-layer. During normal operation, the junction is reversed biased, which creates a region of strong electric field within the junction. When an AC signal is applied to the diode, the electric field forces the electrons to jump from the n-layer to the p-layer, creating a flow of direct current (DC). The flow of current in the diode is limited by the reverse breakdown voltage, so the output voltage of the device is limited as well.

The MUR4L60B0G is designed to be an economical and reliable option for many applications, such as UPSs, solar inverters, power supplies, and automotive or high-voltage switching applications. Its low leakage current and fast turn-off time make it a great choice for your application needs. When using this device, always remember to use a heat sink, as a diode can generate a great deal of heat when in operation.

The specific data is subject to PDF, and the above content is for reference

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