MURB1660CTT4G Discrete Semiconductor Products

Series:	SWITCHMODE™
Packaging:	Tape & Reel (TR)
Part Status:	Active
Diode Configuration:	1 Pair Common Cathode
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	600V
Current - Average Rectified (Io) (per Diode):	8A
Voltage - Forward (Vf) (Max) @ If:	1.5V @ 8A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	60ns
Current - Reverse Leakage @ Vr:	10µA @ 600V
Operating Temperature - Junction:	-65°C ~ 175°C
Mounting Type:	Surface Mount
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK-3
Base Part Number:	MURB1660CT

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MURB1660CTT4G Application Field and Working Principle

Diodes - Rectifiers - Arrays is an important electrical component category that is used in a wide range of applications. The MURB1660CTT4G is a dual MOSFET array that is well-suited for use in power management and other power conditioning applications. It is a very versatile and reliable device, which helps ensure more efficient operation of any device it is installed in.The basic structure of the MURB1660CTT4G is a dual, 4-pin MOSFET array. It is designed to provide an efficient switching solution that can operate in extreme temperature and voltage conditions. It is designed to provide an extremely rugged and reliable solution for various power management and power conditioning applications. The four pins on the device provide an optimum combination of electrical and thermal performance and ensures that the voltage and current ratings are maintained during the device’s operation.The MURB1660CTT4G has a wide range of applications, with the most common being used in power management solutions. This can include switching solutions, signal conditioning solutions, and noise filtering solutions. It is also used in various voltage and current monitoring applications, as well as in other power conditioning solutions where a reliable and efficient device is needed.The working principle of the MURB1660CTT4G is fairly simple and straightforward. The pins on the device are interconnected in a specific way, to provide an effective and reliable solution for a variety of applications. The two MOSFETs are in parallel arrangement, and when a current is applied to one of the MOSFETs, it will create a voltage differential. This voltage differential will be used to power other electronics connected to the device in an efficient manner.The MURB1660CTT4G is also designed to handle extreme temperature and voltage conditions, allowing it to be used in a variety of different applications. These include applications in which the device is expected to constantly switch between high and low temperatures, such as automotive applications. Additionally, it is designed to withstand voltage transients in the range of up to 20 volts, withstanding electrostatic discharge (ESD) levels up to 8 kV and operating temperatures up to 150°C.The MURB1660CTT4G is an extremely versatile device, suitable for use in nearly any power management or power conditioning application. Its combination of electrical and thermal performance, combined with its ability to withstand extreme temperature and voltage conditions, makes it a reliable and efficient choice for many electronic designs.

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