MURB1620CTG Allicdata Electronics
Allicdata Part #:

MURB1620CTGOS-ND

Manufacturer Part#:

MURB1620CTG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE ARRAY GP 200V 8A D2PAK
More Detail: Diode Array 1 Pair Common Cathode Standard 200V 8A...
DataSheet: MURB1620CTG datasheetMURB1620CTG Datasheet/PDF
Quantity: 1865
Stock 1865Can Ship Immediately
Specifications
Series: SWITCHMODE™
Packaging: Tube 
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io) (per Diode): 8A
Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Operating Temperature - Junction: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK-3
Base Part Number: MURB1620CT
Description

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MURB1620CTG are part of a wide range of diode array families manufactured by ON Semiconductor. They are designed to suit various applications such as high speed switching, rectifying, and signal conditioning. This article talks about the application fields and working principles of MURB1620CTG.

MURB1620CTG offers various advantages when it comes to high speed switching, rectifying, and signal conditioning. The device is an integrated circuit (IC) consisting of a stack of four 2.5 Amp Schottky diodes with identical barrier heights and low reverse recovery time. Thanks to its high forward voltage drop, it can reduce the power loss and provide superior thermal performance. In addition, its high current handling capability ensures a strong and reliable performance of the system. Furthermore, the IC has a tight tolerance on the peak reverse voltage and a low internal capacitance.

MURB1620CTG can be used to achieve fast switching, efficient power conversion, low power loss and improved thermal performance in a wide range of applications. It can be used in motor control, line switching, high speed logic level conversion, over current protection, clamping, transient suppression, and reverse polarity protection circuits.

The MURB1620CTG diode array offers a variety of features that enable it to excel in these applications. As previously mentioned, the high forward voltage drop is capable of reducing power loss. It also has a low reverse recovery time, which allows it to switch quickly and accurately. Moreover, the tight tolerance on the peak reverse voltage ensures reliable operation of the system. In addition, the low internal capacitance ensures minimal signal distortion.

The working principle of the MURB1620CTG diode array is relatively straightforward. The device consists of four Schottky diodes arranged in parallel configurations, with each pair connected to the next pair. This arrangement enables the device to handle higher currents. When the device is in operation, the direction of current flow is determined by the reverse voltage, which should not exceed the rated peak reverse voltage. Once the current passes through the device, it is then rectified, which allows it to be used in the various applications detailed earlier.

In conclusion, the MURB1620CTG diode array manufactured by ON Semiconductor is capable of providing superior performance when used in high speed switching, rectifying, and signal conditioning applications. Its high forward voltage drop and low reverse recovery time are advantageous in reducing power loss and ensuring fast switching. Furthermore, its tight tolerance on the peak reverse voltage and low internal capacitance ensures reliable and accurate operation. The basic working principle of this diode array is straightforward and involves the arrangement of four Schottky diodes in series, which is capable of handling higher currents.

The specific data is subject to PDF, and the above content is for reference

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