Allicdata Part #: | MURD305RL-ND |
Manufacturer Part#: |
MURD305RL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 50V 3A DPAK |
More Detail: | Diode Standard 50V 3A Surface Mount DPAK |
DataSheet: | MURD305RL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MURD305RL is a high-performance, single-phase, integrated high-voltage MOS rectifier diode with the mounting package of TO-220. Its rectifier element is made of one high-voltage MOS and one PNP bipolar junction transistor (BJT). It is designed to reduce losses, reduce thermal resistance and improve switching performance in power conversion applications. The products are widely used in UPS, DC-DC, rectifiers, chargers, military equipment, solar and telecom applications, etc.
MURD305RL, with a maximum reverse voltage of 30V and a maximum forward voltage of 60V, has a series of features and benefits. For example, it has low dropout voltage and low reverse leakage current, allowing it to be used in high-voltage circuits, and its large current carrying capability allows it to handle higher currents than regular diodes. Besides, the high-voltage, high-speed switching capability endows MURD305RL with excellent transient response and low EMI (electromagnetic interference) in harsh environments.
Moreover, MURD305RL also has excellent thermal performance. The PN junction temperature of the diode is much lower than that of other single-phase MOS rectifiers. This makes it more reliable and provides a higher long-term operational life. The thermal resistance of MURD305RL is only 0.67°C/W, which is much lower than that of other diodes in its class. This allows it to operate at high temperatures without compromising its reliability.
The working principle of MURD305RL is quite simple. When the externally applied voltage across the diode is negative, the PNP BJT and the MOSFET are low-resistive. The PNP BJT works as a closed switch to ensure the diode is conductive, while the MOSFET allows the current to flow through it. When the applied voltage is positive, the PNP BJT and the MOSFET are both in the off state, thus isolating the diode and prevents the current flow.
In conclusion, MURD305RL is a high-performance, single-phase, integrated high-voltage MOS rectifier diode that is suitable for many power conversion applications. It is designed with a specific reverse voltage and forward voltage capability, along with low dropout voltage, low reverse leakage current, high-voltage, high-speed switching capability, and excellent thermal performance. Its simple working principle makes it suitable for high-voltage circuits and provides a higher level of reliability in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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