Allicdata Part #: | MURH10040RGN-ND |
Manufacturer Part#: |
MURH10040R |
Price: | $ 14.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN PURP 400V 100A D-67 |
More Detail: | Diode Standard, Reverse Polarity 400V 100A Chassis... |
DataSheet: | MURH10040R Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 12.84680 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 100A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 100A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 90ns |
Current - Reverse Leakage @ Vr: | 25µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Chassis Mount |
Package / Case: | D-67 |
Supplier Device Package: | D-67 |
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Single rectifiers can be used in a wide variety of applications including power supplies and related voltage/current sources. The MURH10040R is a single rectifier diode, manufactured by Nidec Corporation, and utilized in applications that require a high-reliability and low-power device. It stands out from other single rectifier diodes due to its low forward voltage drop, which reduces power consumption and increases efficiency while providing improved temperature tracking.
The MURH10040R has a typical forward voltage drop of only 0.5 V and a reverse leakage current of 33 μA. This diode\'s low forward voltage drop leads to a low resistance value, providing lower power losses and higher efficiency. Its reverse leakage current is also significantly lower than that of other rectifier diodes, making it an ideal choice for applications where reverse current leakage is an issue.
To make sure that the MURH10040R is providing the best performance to meet customer requirements, it is important to understand the device\'s working principle and how it applies to the application field of use. A diode is a two-terminal semiconductor device, structured to allow current to flow in one direction. The forward voltage drop in the MURH10040R is formed when electrons from the positive side pass through the junction and become holes on the negative side, creating a voltage barrier.
The reverse leakage current occurs when an equal number of electrons and holes are travelling in the opposite direction, making noise and dissipating power. The MURH10040R is a good choice for high voltage applications as it has a breakdown voltage rating of over 8000V. It can also be beneficial in applications with high switching frequencies due to its fast recovery time.
Despite being a single-rectifier device, the MURH10040R is capable of providing many advantages over other diodes in the same category, due to its ability to minimize power consumption, reduce the amount of noise produced, and provide better temperature tracking. Its low voltage drop ensures increased efficiency, improved thermal performance, and lower power losses.
These features make the MURH10040R a great choice for use in a wide variety of applications, such as power supplies, voltage/current sources, and other high voltage components. Additionally, its fast recovery time, low reverse current leakage, and high breakdown voltage ratings make it an ideal choice for applications where switching frequencies are high.
The specific data is subject to PDF, and the above content is for reference
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