Allicdata Part #: | MURHS160T3G-ND |
Manufacturer Part#: |
MURHS160T3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 600V 1A SMB |
More Detail: | Diode Standard 600V 1A Surface Mount SMB |
DataSheet: | MURHS160T3G Datasheet/PDF |
Quantity: | 1000 |
Series: | MEGAHERTZ™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 2.4V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 20µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | SMB |
Operating Temperature - Junction: | -65°C ~ 175°C |
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The MURHS160T3G is a superfast diode which can be used in many applications. It is a single rectifier which is capable of blocking voltages up to 600V at 3A. It has a maximum forward voltage of 1.1V, a maximum reverse voltage of 5V, a maximum forward surge current of 6A, and a maximum reverse surge current of 15A. This makes it one of the most versatile diodes available, suitable for many applications.
The MURHS160T3G has several applications in the electronics industry. It can be used in power rectification, allowing for efficient conversion of AC to DC power. This diode can also be used in a variety of switching applications, such as relays and isolation switches. Finally, the MURHS160T3G can also be used in bridge rectifiers, which can be found in a variety of industrial and automotive applications.
The working principle of the MURHS160T3G is based on the PN junction diode. A PN junction diode is a type of diode which prevents current from flowing in one direction while allowing it to flow freely in the other direction. To understand how it works, it is important to understand the difference between a P-type and an N-type semiconductor.
The P-type semiconductor is made up of positively charged holes, while the N-type semiconductor is made up of negatively charged electrons. When these two semiconductors are joined together to form a PN junction, a depletion zone is created. This depletion zone is impenetrable to current flow. No charge can flow from the N-type side to the P-type side, meaning that the diode is capable of blocking voltage in one direction.
However, when the anode is connected to a positive voltage source and the cathode to a negative voltage source, the depletion zone will be overloaded, allowing charge to flow from the anode to the cathode. This is known as a forward bias and is the primary mode of operation for the MURHS160T3G. In this mode of operation, the diode will conduct current and allow the flow of electrical energy from one side to the other.
The MURHS160T3G is a crucial component of many different applications due to its versatile nature. It is capable of blocking voltage up to 600V at 3A, making it suitable for higher power applications. The maximum forward voltage of 1.1V, maximum reverse voltage of 5V, maximum forward surge current of 6A, and maximum reverse surge current of 15A also make it suitable for a variety of applications. The working principle of the MURHS160T3G is based on the PN junction diode, which allows the diode to block voltage in one direction and conduct in the other.
The specific data is subject to PDF, and the above content is for reference
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