MURS120HE3_A/I

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MURS120HE3_A/I is a diode rectifier produced by NXP Semiconductors. It is an epitaxial planar Schottky Barrier Rectifier with an integrated gate protection circuit. It is designed for use in high-frequency applications, such as DC-DC converters and power supplies, where fast switching and high efficiency are paramount. The Tj max temperature of this diode rectifier is 175°C.

The MURS120HE3_A/I diode rectifier is constructed from a single epitaxial N-type silicon wafer, containing a Gate Protection Circuit, Schottky Barrier and conduction path for the active circuit. The package for this device comprises a TO-220-5, featuring three terminals: Anode, Cathode and Gate. The leads are made from annealed copper, providing an improved thermal performance and aiding in long-term reliability. The device has a VF of 1.43V, an IF of 120A and an IR of 10mA.

The MURS120HE3_A/I diode rectifier is designed for a wide range of applications, including telecommunication systems, automotive systems, consumer products, medical equipments and computers. It is typically used as a rectifier in various power supplies and DC-DC converters, such as high-frequency switch mode power supplies (SMPS), DC/DC converters, as well as other rectification circuits. Thanks to its high-frequency switching and high efficiency performance, the device is well-suited to handle high-frequency currents, making it a practical solution in applications with limited board space.

The working principle underlying the MURS120HE3_A/I diode rectifier is fairly straight-forward. When an AC or pulsed voltage is applied to the device, an electric field develops between the anode and the cathode. Due to the Schottky barrier, electrons flow from the n-type region to the p-type region, thus producing a current. This current is then directed to the output through the anode, providing a rectified voltage output.

The MURS120HE3_A/I diode rectifier features a variety of design elements which enhance its performance capabilities. The Schottky barrier helps ensure a low VF, while the integrated gate protection circuit reduces the bias current and protects against premature breakdown. Additionally, the device is constructed with N-type silicon material, providing superior thermal capabilities. Taken together, these design elements make the MURS120HE3_A/I an excellent choice for a variety of high-frequency rectification applications.

The specific data is subject to PDF, and the above content is for reference