Allicdata Part #: | MURS160-M3/52TGITR-ND |
Manufacturer Part#: |
MURS160-M3/52T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AA |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AA (SMB... |
DataSheet: | MURS160-M3/52T Datasheet/PDF |
Quantity: | 3000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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MURS160-M3/52T Application Field and Working Principle
MURS160-M3/52T is a type of single rectifier diode, which is specifically designed to convert alternating current (AC) input to direct current (DC) output. This device is mainly used in switching power supplies and other AC to DC rectification systems. The MURS160-M3/52T diode has a low voltage drop and very fast switching speed, making it suitable for use in high-frequency rectification applications.
The working principle of MURS160-M3/52T diode is based on the operation of a p–n junction. When a forward bias is applied to the diode, a depletion region is formed in the immediate vicinity of the junction, isolating the p-type from the n-type region. The forward bias causes electrons from the n-type region to be attracted to the p-type, and the majority carriers (holes) from the p-type region to be attracted to the n-type. This creates a current flow in the diode, allowing for current to flow from the n-type to the p-type. The current is of exactly the same polarity as the applied voltage across the diode, hence rectifying the AC input.
Due to its low voltage drop and fast switching speed, MURS160-M3/52T diodes are used in a variety of applications. These include AC to DC power supplies, DC-DC converters, AC motor speed controllers, switching power supplies, and more. The device is also used in traction applications, such as electric vehicles, which require efficient and accurate rectification of the AC input voltage.
The design of the MURS160-M3/52T incorporates an array of innovative features that help deliver superior performance in various rectification applications. These features include an anode ring for improved thermal dissipation and faster switching, as well as a low forward voltage drop, low reverse leakage current, and robust antijunction for improved heat resistance and long operating life.
Overall, the MURS160-M3/52T is an excellent choice for rectification applications which require fast switching and a low voltage drop. It is suitable for use in a range of applications such as AC to DC power supplies, DC-DC converters, and switching power supplies. Its innovative design helps deliver superior performance and long operating life.
The specific data is subject to PDF, and the above content is for reference
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MURS220T3G | ON Semicondu... | 0.09 $ | 1000 | DIODE GEN PURP 200V 2A SM... |
MURS240T3G | ON Semicondu... | -- | 10000 | DIODE GEN PURP 400V 2A SM... |
MURS260T3G | ON Semicondu... | -- | 39984 | DIODE GEN PURP 600V 2A SM... |
MURS160-E3/52T | Vishay Semic... | -- | 17250 | DIODE GEN PURP 600V 2A DO... |
MURS320-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
MURS120-E3/52T | Vishay Semic... | -- | 18000 | DIODE GP 200V 1A DO214AAD... |
MURS3G-TP | Micro Commer... | 0.08 $ | 1000 | 3A,400V, SUPER FAST RECOV... |
MURS205T3G | ON Semicondu... | 0.08 $ | 2500 | DIODE GEN PURP 50V 2A SMB... |
MURS160HE3_A/H | Vishay Semic... | -- | 2250 | DIODE GEN PURP 600V 2A DO... |
MURS340HE3_A/I | Vishay Semic... | 0.19 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
MURS1J-TP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 1A 600V SM... |
MURS320-E3/57T | Vishay Semic... | -- | 10200 | DIODE GEN PURP 200V 3A DO... |
MURS480ET3G | ON Semicondu... | -- | 12500 | DIODE GEN PURP 800V 4A SM... |
MURS120TR | SMC Diode So... | 0.06 $ | 6000 | DIODE GEN PURP 200V 1A SM... |
MURS115T3G | ON Semicondu... | -- | 10000 | DIODE GEN PURP 150V 2A SM... |
MURS160-M3/52T | Vishay Semic... | -- | 3000 | DIODE GEN PURP 600V 1A DO... |
MURS140-E3/52T | Vishay Semic... | -- | 3000 | DIODE GEN PURP 400V 2A DO... |
MURS340-E3/57T | Vishay Semic... | -- | 1700 | DIODE GEN PURP 400V 3A DO... |
MURS110T3G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
MURS2J-TP | Micro Commer... | 0.07 $ | 1000 | 2A,600V, SUPER FAST RECOV... |
MURS160-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
MURS140-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 2A DO... |
MURS160-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 2A DO... |
MURS3JB-TP | Micro Commer... | 0.08 $ | 1000 | 3A,600V, SUPER FAST RECOV... |
MURS320TR | SMC Diode So... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
MURS230T3G | ON Semicondu... | 0.11 $ | 1000 | DIODE GEN PURP 300V 2A SM... |
MURS360S-E3/5BT | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
MURS360S-E3/52T | Vishay Semic... | -- | 750 | DIODE GEN PURP 600V 3A DO... |
MURS340HE3_A/H | Vishay Semic... | -- | 1700 | DIODE GEN PURP 400V 3A DO... |
MURS140-13-F | Diodes Incor... | -- | 48000 | DIODE GEN PURP 400V 1A SM... |
MURS120T3G | ON Semicondu... | -- | 157500 | DIODE GEN PURP 200V 2A SM... |
MURS160T3G | ON Semicondu... | -- | 38857 | DIODE GEN PURP 600V 2A SM... |
MURS320T3G | ON Semicondu... | -- | 1000 | DIODE GEN PURP 200V 3A SM... |
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MURS360-M3/9AT | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
MURS340-M3/57T | Vishay Semic... | 0.15 $ | 1000 | DIODE GEN PURP 400V 3A DO... |
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