MURS340HE3_A/H Allicdata Electronics

MURS340HE3_A/H Discrete Semiconductor Products

Allicdata Part #:

MURS340HE3_A/HGITR-ND

Manufacturer Part#:

MURS340HE3_A/H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 3A DO214AB
More Detail: Diode Standard 400V 3A Surface Mount DO-214AB (SMC...
DataSheet: MURS340HE3_A/H datasheetMURS340HE3_A/H Datasheet/PDF
Quantity: 1700
Stock 1700Can Ship Immediately
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 175°C
Base Part Number: MURS340
Description

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Diodes are semiconductor devices used in a wide range of application fields, including power conversion, rectifier, multiplexer, analog radio frequency applications, and more. The MURS340HE3_A/H is one of these devices and mainly used for rectifier circuit applications. This diode is also used for multiplexer applications, analog radio frequency applications, and multiplexer applications with an adjacent diode.

The MURS340HE3_A/H is a single rectifier diode that has a reverse recovery time of 4µs, and a maximum operating frequency of 2 MHz. It provides low forward voltage drop, low-capacitance, and high-speed switching. The MURS340HE3_A/H is also a high-performance diode, enabling fast switching and a low forward voltage drop in alternating current (AC) circuits. The diode also offers a high reverse power capability, meaning it can withstand large reverse voltages.

The main feature of the MURS340HE3_A/H diode is its low forward voltage drop. This feature combined with its low capacitance makes it an ideal choice for circuits that require high-frequency switching frequencies. The MURS340HE3_A/H has a low capacitance of 2pF and a maximum operating frequency of 2 MHz. This makes it suitable for applications such as single and multiplexers, radio frequency amplifiers, and signal generation and detection circuits.

The operating principle of the MURS340HE3_A/H diode is relatively simple. It is a PN junction diode. When the applied voltage is greater than the breakdown voltage of the diode, a current flow occurs from the anode to the cathode. As the current flows from the anode to the cathode, a voltage drop occurs because of the resistance of the PN junction. This voltage drop is called the forward voltage drop.

The MURS340HE3_A/H diode also has a reverse operation characteristic. When the applied voltage is less than the reverse breakdown voltage, the current flows from the cathode to the anode. This flow of current is called the reverse current, and can cause charging of the junction capacitance. The reverse current also affects the lifetime of the diode and must be taken into consideration when designing a circuit.

The MURS340HE3_A/H diode is ideal for a variety of applications, such as rectifying circuits, voltage dropping, and reverse blocking circuits. The device\'s performance and small size make it suitable for high-frequency applications. The diode also provides a low forward voltage drop, enabling more efficient operation of circuits requiring high-speed switching. Additionally, the device\'s high reverse power capability makes it suitable for applications where large ambient and reverse voltage fluctuations may be an issue.

In summary, the MURS340HE3_A/H diode is a single rectifier diode with a maximum operating frequency of 2 MHz. It features a low forward voltage drop, low-capacitance, and high-speed switching, making it well suited for a number of applications. It is also capable of handling high reverse power, enabling reliable and efficient operation in circuits with large voltage fluctuations.

The specific data is subject to PDF, and the above content is for reference

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