Allicdata Part #: | MURS2J-TPMSTR-ND |
Manufacturer Part#: |
MURS2J-TP |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | 2A,600V, SUPER FAST RECOVERY REC |
More Detail: | Diode Standard 600V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | MURS2J-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06549 |
6000 +: | $ 0.06152 |
15000 +: | $ 0.05755 |
30000 +: | $ 0.05292 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.25V @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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MURS2J-TP Application Field and Working Principle
MURS2J-TP is an advanced single-phase rectifier diode from ON Semiconductor. It is a state-of-the-art rectifier diode that offers improved efficiency, power loss and performance. The MURS2J-TP is specified for operation up to +175°C junction temperature and is suitable for high-efficiency, high-current and high-frequency bridge rectifier applications.
The MURS2J-TP is ideal for designing a range of full-bridge rectifier circuits in automotive, consumer products and industrial applications. Its low junction capacitance and high current capabilities also make it suitable for high-speed switching applications. Its ultra-low forward voltage drop ensures that no power is wasted resulting in increased design efficiency.
Properties
The prominent properties of the MURS2J-TP are as follows:
- High surge current rating.
- High blocking voltage.
- High junction temperature rating.
- Low forward voltage drop.
- Fast switching speed.
- Low thermal resistance.
- Excellent ESD protection.
- Excellent surge characteristics.
- High reverse leakage.
Application field
Due to its advanced features, the MURS2J-TP is widely used in applications such as:
- Automotive full-bridge rectifiers.
- High-efficient power supply.
- Full-bridge inverters.
- High-frequency power supply.
- DC motor controls.
- Telecommunications.
- Computer/ peripherals.
- Battery chargers.
- Isolated DC-DC converters.
- Other high-frequency, high-efficiency rectifier applications.
Working principle
The working principle of a MURS2J-TP is based on the principle of a rectifier diode. A rectifier diode is an electrical device that converts alternating current (AC) to direct current (DC). It is made up of two semiconductor electrodes, called an anode and a cathode, connected to an insulating layer called a P–N junction. The anode is the positive terminal and the cathode is the negative terminal.
When the voltage polarity across the P–N junction of the diode is positive, the diode is said to be in forward bias and the diode current flows from the anode to the cathode. The diode is said to be in reverse bias when the voltage polarity is negative. In this condition, the diode acts as an insulator and no current flows.
In the MURS2J-TP, the forward voltage drop is kept very low and the blocking voltage is kept very high, so that it can easily handle high currents, switching speeds, temperatures and frequencies. The device has excellent surge characteristics and low leakage, making it suitable for use in high-efficiency rectifier circuits. The MURS2J-TP also has excellent ESD protection and low thermal resistance, making it ideal for use in automotive, consumer products and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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