MURS340HE3/9AT

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	400V
Current - Average Rectified (Io):	3A
Voltage - Forward (Vf) (Max) @ If:	1.25V @ 3A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	10µA @ 400V
Capacitance @ Vr, F:	--
Mounting Type:	Surface Mount
Package / Case:	DO-214AB, SMC
Supplier Device Package:	DO-214AB (SMC)
Operating Temperature - Junction:	-65°C ~ 175°C
Base Part Number:	MURS340

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Introduction

MURS340HE3/9AT is a single rectifier diode. It is a type III-V, Schottky barrier diode (SBD) with a high dielectric constant and an ultra-fast switching speed. This diode is manufactured in a soft subsurface technology at room temperature and is specifically designed to provide excellent overload and reverse-recovery characteristics in a wide range of power applications. The unique construction and design of the MURS340HE3/9AT make it ideal for use in power electronics, solar cells and other energy efficient applications.

Applications

The MURS340HE3/9AT is designed for use in a variety of high-voltage, high-power, medium-current applications such as full-bridge inverters and DC-DC converters. The diode is also suited for LED lighting, uninterruptible power supplies (UPSs), renewable energy sources and other power electronic applications.Due to its high breakdown voltage of 340V, the device is suitable for battery-based systems, automotive applications and other bulk voltage supplies.In addition, the MURS340HE3/9AT is highly efficient and can significantly reduce the power losses and standby losses of the circuit. It is also well suited for fast-switching applications due to the extremely low switching speeds.

Features

The MURS340HE3/9AT features a maximum repetitive peak reverse voltage (Vpp) of up to 340V, making it suitable for greater breakage voltage and voltage spikes. The maximum working current (Ipk) is 2A, allowing it to handle high currents. The diode also features a low forward voltage drop of 1.1 V and a low reverse leakage current of 0.02 mA. In addition, the device is a RoHS compliant product and provides improved power efficiency of up to 85%. The reverse recovery time of the diode is extremely fast, at under 10 ns.

Working Principle

In operation, the MURS340HE3/9AT works on the principle of minority carrier injection. This means that carriers of the same polarity are injected into the diode and the diode effectively forms a space charge region of the same polarity.The minority carrier injection mechanism operates when the forward bias is applied to the diode, injecting carriers of the same polarity. This injected carrier then pushes the anode of the diode to a higher potential. When there is an increase in the anode potential, this potential also appears at the diode\'s p-n junction, creating a \'space charge region\' of the same polarity.This action causes the current to flow in the diode and results in the forward current through the diode. The current can be controlled by varying the amount of minority carriers injected into the diode.

Conclusion

The MURS340HE3/9AT is an ideal device for a variety of high-power, medium-current applications such as full-bridge inverters and DC-DC converters. Its unique construction and design provide excellent overload and reverse-recovery characteristics. It has a high breakdown voltage of 340V and a low forward voltage drop of 1.1V. The diode also has an extremely low reverse leakage current of 0.02mA and a fast reverse recovery time of less than 10ns. Finally, the MURS340HE3/9AT is RoHS compliant and offers excellent power efficiency.

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