Allicdata Part #: | MURS340SHE3_A/H-ND |
Manufacturer Part#: |
MURS340SHE3_A/H |
Price: | $ 0.11 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 1.5A DO214AA |
More Detail: | Diode Standard 400V 1.5A Surface Mount DO-214AA (S... |
DataSheet: | MURS340SHE3_A/H Datasheet/PDF |
Quantity: | 1000 |
2250 +: | $ 0.09433 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 1.5A |
Voltage - Forward (Vf) (Max) @ If: | 1.45V @ 3A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 400V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -65°C ~ 175°C |
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Diodes are widely used semiconductor devices, and play a key role in various applications. The MURS340SHE3_A/H diode utilizes modern semiconductor technology to achieve broad performance. It is a single, rectifying diode and is composed of an anode and cathode. This diode is designed for use in a wide variety of applications and provides superb electrical performance.
The MURS340SHE3_A/H diode can be used as a rectifier in many applications. In rectification, voltage is converted from alternating current to direct current, able to be used to power electronic devices. Rectification is used in many applications, including power conversion, battery charging, and even in the production of electroplating. This diode can also be used as an EMI filter in power lines, which removes electromagnetic interference to ensure the efficient operation of electronic devices.
The MURS340SHE3_A/H diode is made up of a semiconductor material wafer. This material is kept in a sealed package and is between the two metal contacts. The semiconductor material is termed as the base of the diode and it contains two types of doped materials, namely N-type and P-type. N-type materials contain more electrons and P-type materials contain fewer electrons. When the anode and cathode come into contact, the electrons from the N-type materials flow to the P-type material. This causes a reverse current to flow from the cathode to the anode.
To understand how the MURS340SHE3_A/H diode works, it is important to understand the diode\'s characteristics. This diode has a high forward current rating, meaning it can handle higher current than most other diodes. It also has low reverse current leakage, meaning that when a voltage is applied in the reverse direction, very little current is allowed to pass through the diode. This reduces overall power dissipation and minimizes the risk of overheating.
The MURS340SHE3_A/H diode also has a very low forward voltage drop. This means that when a current is applied in the forward direction, it will reach its destination with very little voltage loss. This is especially useful when using this diode for rectification, as it provides an efficient way to transfer energy from alternating current to direct current.
The high electrical performance of the MURS340SHE3_A/H diode makes it ideal for a wide range of applications. Its low voltage drop allows for efficient conversion of power from alternating current to direct current, while its low reverse current leakage makes it a powerful choice for EMI filtering. Its low contact resistance makes it suitable for low voltage/low power applications, like trickle-charging a battery, while its high forward current rating makes it perfect for high current applications.
In conclusion, the MURS340SHE3_A/H diode is highly recommended for use in a variety of applications, due to its superior electrical performance. This diode is composed of an anode and cathode, which are made of semiconductor wafers. When a voltage is applied in the forward direction, the semiconductor material produces a low voltage drop and allows the current to flow with very little loss. When the voltage is applied in a reverse direction, the diode utilizes its low reverse current leakage and virtually prevents the flow of electric current. The MURS340SHE3_A/H diode is perfect for a variety of uses, from rectification to EMI filtering to battery charging, and is highly recommended for its superior electrical performance.
The specific data is subject to PDF, and the above content is for reference
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MURS140-E3/52T | Vishay Semic... | -- | 3000 | DIODE GEN PURP 400V 2A DO... |
MURS340-E3/57T | Vishay Semic... | -- | 1700 | DIODE GEN PURP 400V 3A DO... |
MURS110T3G | ON Semicondu... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
MURS2J-TP | Micro Commer... | 0.07 $ | 1000 | 2A,600V, SUPER FAST RECOV... |
MURS160-13-F | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
MURS140-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 400V 2A DO... |
MURS160-E3/5BT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 2A DO... |
MURS3JB-TP | Micro Commer... | 0.08 $ | 1000 | 3A,600V, SUPER FAST RECOV... |
MURS320TR | SMC Diode So... | 0.11 $ | 1000 | DIODE GEN PURP 200V 3A SM... |
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MURS360S-E3/5BT | Vishay Semic... | 0.11 $ | 1000 | DIODE GEN PURP 600V 3A DO... |
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