Allicdata Part #: | MURTA200120R-ND |
Manufacturer Part#: |
MURTA200120R |
Price: | $ 55.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | GeneSiC Semiconductor |
Short Description: | DIODE GEN 1.2KV 100A 3 TOWER |
More Detail: | Diode Array 1 Pair Common Anode Standard 1200V 100... |
DataSheet: | MURTA200120R Datasheet/PDF |
Quantity: | 1000 |
18 +: | $ 50.19980 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Anode |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200V |
Current - Average Rectified (Io) (per Diode): | 100A |
Voltage - Forward (Vf) (Max) @ If: | 2.6V @ 100A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Current - Reverse Leakage @ Vr: | 25µA @ 1200V |
Operating Temperature - Junction: | -55°C ~ 150°C |
Mounting Type: | Chassis Mount |
Package / Case: | Three Tower |
Supplier Device Package: | Three Tower |
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MURTA200120R is an array of rectifier diodes available in compact, surface-mount packages, which is often used for high-power applications. It consists of two stages of N-channel MOSFETs and one stage of Schottky diodes connected in series and arranged in a bridge configuration. This configuration provides a high level of efficiency, as the electrical current passes through the device only once, instead of multiple times as in a traditional diode bridge. The MURTA200120R is designed with a low forward voltage drop and is capable of handling large inrush currents and up to 90A peak reverse currents, making it suitable for both low-power applications and high-power applications.
The MURTA200120R is intended to be used in applications such as DC-DC converters, switch-mode power supplies, and power inverters. It can be used in automotive, industrial, and other high-power applications. As it is capable of handling large inrush currents, it can be used as a power supply in start-up circuits. This rectifier can also be used in load switching applications where large power dissipation is needed.
The working principle of the MURTA200120R is based on the process of rectification which is used to convert alternating current (AC) into direct current (DC). The MURTA200120R contains two MOSFETs and one Schottky diode connected in series and arranged into a bridge configuration. The two MOSFETs are used to rectify the input AC current by causing it to flow through one of the MOSFETs depending on the polarity of the input AC current. The Schottky diode is used to short the gate-source of the MOSFETs and ensure that the rectification is achieved even when the MOSFETs are in the off state. The output is a DC voltage that varies with input current, which can then be used in any application.
In summary, the MURTA200120R is a rectifier array that can be used in high-power applications. It consists of two stages of N-channel MOSFETs and one stage of Schottky diodes which are connected in a bridge configuration and are used to rectify alternating current into direct current. The MURTA20012R array has low forward voltage drop and can handle large inrush currents and up to 90A peak reverse currents. It is suitable for numerous applications such as DC-DC converters, switch-mode power supplies and load switching applications.
The specific data is subject to PDF, and the above content is for reference
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