MURT20010R

Series:	--
Packaging:	Bulk
Part Status:	Active
Diode Configuration:	1 Pair Common Anode
Diode Type:	Standard
Voltage - DC Reverse (Vr) (Max):	100V
Current - Average Rectified (Io) (per Diode):	200A (DC)
Voltage - Forward (Vf) (Max) @ If:	1.3V @ 100A
Speed:	Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):	75ns
Current - Reverse Leakage @ Vr:	25µA @ 50V
Mounting Type:	Chassis Mount
Package / Case:	Three Tower
Supplier Device Package:	Three Tower

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Introduction

MURT20010R is one of the Rectifier Diodes Arrays products developed by Vishay Semiconductor. This small-signal diode is typically used in power supply, telecommunication, and switching applications. It has low forward voltage drop and high current handling capability, making it suitable for many high-power applications. This article discusses the application fields and working principle of the MURT20010R Rectifier Diode Array.

Application Fields

MURT20010R rectifier diodes arrays can be used in a variety of applications, primarily those requiring high-power capabilities. Examples include the following:

• Power Supplies – MURT20010R rectifier diodes arrays can provide efficient power conversion. They are used in AC/DC power supplies, switching power supplies, and DC/DC power conversion.
• Telecommunication – The MURT20010R is also suitable for use in telecommunications applications. It can be used for protection against ESD or ground loops and for tempering the output voltage.
• Switching – The MURT20010R is also suitable for switching applications, such as for circuit protection, line-interface, and automated control systems.
• Other Applications – The MURT20010R can also be used in other general-purpose applications, including agricultural and industrial equipment, medical equipment, and automobiles.

Working Principle

The MURT20010R is a rectifier diode array, which is an integrated circuit with four individually shielded silicon diodes connected in parallel. Each of the diodes can be used to rectify an input signal and convert it to a DC output. The device is designed to reduce EMI due to the shielding of each individual diode.The internal structure of the MURT20010R consists of four independent N-type and P-type diodes connected in parallel. When a DC voltage is applied across the diode array, the voltage falls from the input to one diode, then splits into two parts. The first part is the P-type diode, which conducts when the forward voltage is forward biased and therefore transfers the current from the input.The other part is the N-type diode, which conducts when the reverse voltage is reverse biased and therefore drops the current from the output. This process is continued until the input voltage is completely dropped across the four separate diodes.

Conclusion

The MURT20010R can be used in a variety of applications, such as power supply, telecommunication, and switching applications. Its low forward voltage drop and high current handling capability make it suitable for many high-power applications. The device also has the advantage of being shielded and so reduces EMI.

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