Allicdata Part #: | MW5IC2030GMBR1-ND |
Manufacturer Part#: |
MW5IC2030GMBR1 |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | NXP USA Inc |
Short Description: | IC PWR AMP RF 26V 30W TO272-16GW |
More Detail: | RF Amplifier IC Cellular, CDMA, EDGE, GSM, TDMA, W... |
DataSheet: | MW5IC2030GMBR1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 1.93GHz ~ 1.99GHz |
P1dB: | -- |
Gain: | 23dB |
Noise Figure: | -- |
RF Type: | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
Voltage - Supply: | 26V |
Current - Supply: | 160mA |
Test Frequency: | -- |
Package / Case: | TO-272-16 Variant, Gull Wing |
Supplier Device Package: | TO-272 WB-16 GULL |
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RF amplifiers are designed to increase the power of an RF signal, allowing it to cover a greater distance or to penetrate obstacles such as walls and other obstructions. They are used in a variety of applications including communications, broadcasting, and military applications. One of the most commonly used RF amplifiers is the MW5IC2030GMBR1. This amplifier features LDMOS for use in mobile applications and is equipped with a microcontroller and a dedicated USB connection. It is designed to provide high linearity performance and is suitable for use in GSM, CDMA, and PCS networks.
The MW5IC2030GMBR1 features a wide variety of applications including power supply line protection, low noise amplifier (LNA) and power amplifier (PA) stages, repeaters, and system-on-chip (SoC) designs. It can be used to increase the range of radio communications in remote or rural areas, as well as for enhancing the clarity and stability of a radio signal in an urban environment. The amplifier is capable of being configured with a range of power levels to suit different types of applications, and it is able to offer up to 20 dB of linear gain. Furthermore, it includes several features such as built-in temperature sensing, automatic power shutdown, and a low noise figure.
The working principle of the MW5IC2030GMBR1 involves the use of a high-voltage, integrated GaN FET, which helps it to achieve high efficiency. The integrated FET and the microcontroller also allow for the configuration of the amplifier in either a two- or four-stage configuration, depending on the user’s requirements. The amplifier is also able to provide a variety of gain levels depending on the application. The amplifier includes a high power control system that can be used to monitor its power level, and it is also able to operate within a temperature range of –20°C to 70°C. Additionally, the amplifier offers very low distortion and low noise levels.
Overall, the MW5IC2030GMBR1 is a robust amplifier that can be used in a variety of applications. It is easily configurable and provides high levels of linearity, efficiency, and power control. It is also able to operate within a wide temperature range, making it suitable for use in any environment. With its wide range of features and its robust construction, the MW5IC2030GMBR1 is a great choice for any application that requires an RF amplifier.
The specific data is subject to PDF, and the above content is for reference
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