MW5IC2030MBR5 Allicdata Electronics
Allicdata Part #:

MW5IC2030MBR5-ND

Manufacturer Part#:

MW5IC2030MBR5

Price: $ 35.39
Product Category:

RF/IF and RFID

Manufacturer: NXP USA Inc
Short Description: IC PWR AMP RF 26V 30W TO-272-16
More Detail: RF Amplifier IC Cellular, CDMA, EDGE, GSM, TDMA, W...
DataSheet: MW5IC2030MBR5 datasheetMW5IC2030MBR5 Datasheet/PDF
Quantity: 1000
50 +: $ 32.16630
Stock 1000Can Ship Immediately
$ 35.39
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Frequency: 1.93GHz ~ 1.99GHz
P1dB: --
Gain: 23dB
Noise Figure: --
RF Type: Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
Voltage - Supply: 26V
Current - Supply: 160mA
Test Frequency: --
Package / Case: TO-272-16 Variant, Flat Leads
Supplier Device Package: TO-272 WB-16
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The MW5IC2030MBR5 RF Amplifier is a high performance, high linearity, and low-noise temperature compensation GaAs pHEMT foundry InGaP HBT hybrid technology used in multi-carrier base station amplifiers with frequencies from 500MHz to 3500MHz. This RF Amplifier has convenient installation, and it is capable of providing superior power gain per watt of power. InGaP HBT technology enables improved linearity while consuming significantly lower power resulting higher efficiency. In addition, the hybrid technology also makes use of efficient temperature compensation for operating efficiency.

The MW5IC2030MBR5 RF Amplifier can be used in a wide variety of applications such as cellular base station amplification, wireless backhaul links, point-to-point radio links, WiFi access points, and outdoor wireless nodes. Its high gain and low noise figure offer outstanding signal-to-noise performance and are suited for long-distance base station links. The high-performance amplifier has a wide frequency range and linearity over the whole range, making it ideal for use in multi-carrier base station amplifiers. The amplifier also features temperature compensation, which enables faster customization and improved reliability.

The working principle behind the MW5IC2030MBR5 RF Amplifier is based on its InGaP HBT hybrid technology. InGaP HBT combines GaAs pHEMT with InGaP HBT devices to create a low-cost GaAs pHEMT solution with improved linearity and low-noise performance. The hybrid technology provides superior power gain per watt by exploiting the combined performance of both InGaP HBT and GaAs pHEMT. The temperature compensation feature compensates for temperature variations and helps maintain amplifier stability.

The MW5IC2030MBR5 RF Amplifier is a reliable and highly efficient amplifier for applications such as base station amplification, multi-carrier base station amplification, and wireless backhaul links. Its wide frequency range and improved linearity make it ideal for applications requiring high power gains. The temperature compensation feature ensures stability and faster customization, providing enhanced convenience and improved performance.

The specific data is subject to PDF, and the above content is for reference

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