MX1N8161 Allicdata Electronics
Allicdata Part #:

MX1N8161-ND

Manufacturer Part#:

MX1N8161

Price: $ 22.40
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE
More Detail: N/A
DataSheet: MX1N8161 datasheetMX1N8161 Datasheet/PDF
Quantity: 1000
100 +: $ 20.37030
Stock 1000Can Ship Immediately
$ 22.4
Specifications
Series: *
Part Status: Active
RoHS Status: RoHS non-compliant
Description

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TVS or transient voltage suppression diodes are an essential protection device for sensitive electronic systems. The MX1N8161 is designed to protect systems against electrostatic discharge (ESD) and surge spike events. ESD susceptible components in a system can be destroyed by the damaging transient current surges. The MX1N8161 is designed to protect against these events and is suitable for use in automotive, appliance, telecom/datacom, industrial and consumer applications.

An ESD or surge event, due to a charged backplane, car-body/motorcycle and industrial controls can cause large voltages to be seen by the electronics system, potentially causing damage. The MX1N8161 is a monolithic TVS diode which consists of a multi-layered ESD protection network of diodes and resistors configured to provide a low clamping voltage during surges, yet with very low-reverse leakage when clamped off.

The low clamping voltage prevents transients from damaging sensitive components, while the low-leakage current assists in reducing time-dependent current load on the application system. This provides protection for the system, while ensuring that the current remains within specified system limits. The MX1N8161 has an operating voltage range of 8V to 24V and is rated to protect against 6kV IEC61000-4-2 (ESD) and 6kV line discharge ratings. It is also compliant with IEC61000-4-4 (EFT) and EN61000-4-5 (surge) ratings.

The working principle of the MX1N8161 is based on avalanche breakdown. In a standard circuit, a breakdown is caused by a high electric field, created by the increased size of the depletion region in the device. The MX1N8161 uses an avalanche breakdown mechanism to reduce the protection voltage. It consists of a large area Schottky diode, a resistor and an insulated gate bipolar transistor (IGBT). When a high voltage transient strikes, the ESD/surge event causes the voltage across the diode to exceed the breakdown voltage of the IGBT, allowing the current to flow. This reduces the potential transient voltage to the device’s breakdown voltage without impacting the system.

The main application of the MX1N8161 is for providing protection to sensitive electronic systems against ESD and surge events. The device is suitable for automotive, appliance, telecom/datacom, industrial and consumer applications. It provides low clamping voltage protection and low-leakage current operation in order to protect the system without excessive load on the system. The device is also compliant with numerous IEC protection ratings and has an operating voltage range of 8V to 24V. Overall, the MX1N8161 is a reliable and cost-effective solution for protecting a variety of sensitive systems against harmful ESD spikes and surges.

The specific data is subject to PDF, and the above content is for reference

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