| Allicdata Part #: | MX1N8162-ND |
| Manufacturer Part#: |
MX1N8162 |
| Price: | $ 22.40 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | MX1N8162 Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 20.37030 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
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Transient-voltage-suppression (TVS) diodes, also referred to as surge-suppression diodes, are designed to protect sensitive electronic components from harmful transients that may occur in a circuit. The MX1N8162 is a TVS diode that is used to guard against electrical overstress, such as that caused by lightning, electrostatic discharge (ESD), and other high-voltage transients. In this article, we will take a look at the application field and working principle of the MX1N8162 surge-protection diode.
The MX1N8162 is a high-performance, low-cost diode that can be used in a wide variety of applications. It is designed to protect sensitive devices, such as computer systems, communications systems, medical devices, and instrumentation, from the effects of transient events. It can be used in a single-line application, a two-line application, or a distributed application. In all applications, the diode is mounted on a printed circuit board (PCB).
The MX1N8162 has a maximum breakdown voltage of 8.1V and a maximum reverse leakage of 1 mA. It also has a low capacitance of 0.21pF and a low resistance of 0.5 mOhms. When placed in a circuit, the diode will clamp the voltage to 8.1V, regardless of the applied voltage. This ensures that the sensitive circuit it is protecting is not damaged by an overvoltage event. The diode can also be used as a protection circuit in high-power DC systems. By clamping the voltage to 8.1V, the diode will protect the sensitive circuits it is connected to from overvoltage events.
The working principle of the MX1N8162 is based on the forward-biased diode clamping principle. When a voltage is applied to the diode, a reverse-biased voltage is created across the diode junction. This reverse-biased voltage prevents any further increase in the applied voltage until the maximum breakdown voltage is reached. Once this voltage is reached, the diode will clamp the voltage to the breakdown voltage, thus preventing further voltage increases. The MX1N8162 is designed to protect against transient overvoltage events, such as those caused by lightning or ESD events. The diode will also protect against more permanent voltage events, such as those caused by power-supply noise or power surges.
The MX1N8162 is a useful component for a wide variety of applications, due to its high performance, low cost, and small size. It can be used in a single-line or two-line protection circuit to guard against transient events or more permanent voltage events. The MX1N8162 is also suitable for use in high-power DC systems, providing protection against overvoltage events. Its low capacitance and low resistance make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MX1N8156 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8162 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8163US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8167US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8150 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8170US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8164 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8167 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8150US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8155 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8177US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8171 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8169 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8177 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8161US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8153 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8160US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8162US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8171US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8178US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8159US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8173 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8175 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8154 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8172US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8163 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8152 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8151 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8157US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8152US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8158 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8149US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8172 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8173US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8168US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8159 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8169US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8181 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8179US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8149 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
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MX1N8162 Datasheet/PDF