MX1N8165US Circuit Protection |
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| Allicdata Part #: | MX1N8165US-ND |
| Manufacturer Part#: |
MX1N8165US |
| Price: | $ 22.58 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE |
| More Detail: | N/A |
| DataSheet: | MX1N8165US Datasheet/PDF |
| Quantity: | 1000 |
| 100 +: | $ 20.51670 |
| Series: | * |
| Part Status: | Active |
| RoHS Status: | RoHS non-compliant |
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TVS diodes, or transient voltage suppressors, are components designed to protect downstream devices such as microprocessors, microcontrollers, and other electronic components, from voltage spikes, transients, or surges that exceed the nominal operating voltage. The MX1N8165US is an integrated TVS diode specifically designed and manufactured by Murata Power Solutions to protect 3.3 V systems. It has low capacitance and low leakage current, making it ideal for high-speed data lines, such as Serial ATA. This device is characterized by an ESD rating of 8 kV (5 kV according to IEC61000-4-2 regulations).
The MX1N8165US is a single-line TVS designed to protect against ESD, lightning, and other voltage transients. It features a small form factor, wide operating voltage range of -5 V to +24 V, and a maximum peak pulse current of 2 A. It is designed to clamp the surge voltage to a safe level far below the threshold of the sensitive ICs, while providing a low clamping voltage and a low leakage current. It can be used in a wide range of applications, such as USB and HDMI ports, Ethernet connectors, and RS232/422/485 serial communication lines.
The MX1N8165US has a proprietary design in which both ends of the diode are connected to the ground. This ensures that the device can absorb the current and effectively protect the connected components or system. Additionally, both sides are built with electrostatic protective layers to prevent unintentional discharging of energy from the device. This makes it an excellent choice for use in microprocessor-based systems, data communication ports, and other applications that require constant protection.
The working principle of the MX1N8165US relies on the zener effect, which is characterized by a highly nonlinear voltage-current relationship. When a voltage spike occurs, the current quickly jumps up to limit the voltage to a safe level. However, this characteristic also means that the device needs to be selected carefully to make sure it can handle the surge current without creating potential problems. As such, the MX1N8165US series is designed with a low clamping voltage and a low leakage current. This ensures that the device can reliably protect the downstream components from voltage spikes without affecting normal operation.
The MX1N8165US is a specialized component with many benefits to offer high-speed digital systems. It is easy to integrate into existing designs and can protect 3.3 V systems from ESD, transients, and surges. The low clamping voltage and low leakage current ensure reliable operation without disrupting normal operation, making it an excellent choice for high-speed data lines such as USB and HDMI. As such, the MX1N8165US is an ideal solution for providing effective protection for microprocessor-based systems and data communication ports.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MX1N8156 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8162 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8163US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8167US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8150 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8170US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8164 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8167 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8150US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8155 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8177US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8171 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8169 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8177 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8161US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8153 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8160US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8162US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8171US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8178US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8159US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8173 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8175 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8154 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8172US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8163 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8152 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8151 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8157US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8152US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8158 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8149US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8172 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8173US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8168US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8159 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8169US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8181 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
| MX1N8179US | Microsemi Co... | 22.58 $ | 1000 | TVS DIODE |
| MX1N8149 | Microsemi Co... | 22.4 $ | 1000 | TVS DIODE |
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MX1N8165US Datasheet/PDF