MX1N8168US Allicdata Electronics

MX1N8168US Circuit Protection

Allicdata Part #:

MX1N8168US-ND

Manufacturer Part#:

MX1N8168US

Price: $ 22.58
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE
More Detail: N/A
DataSheet: MX1N8168US datasheetMX1N8168US Datasheet/PDF
Quantity: 1000
100 +: $ 20.51670
Stock 1000Can Ship Immediately
$ 22.58
Specifications
Series: *
Part Status: Active
RoHS Status: RoHS non-compliant
Description

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TVS - Diodes

The MX1N8168US is a Transient Voltage Suppression (TVS) diode specifically designed for automotive electronic applications. It is an electro-mechanical device used to protect sensitive electronic circuits from high level of electrical transients. It is an Uni-Directional TVS with a 190V working voltage rating. The device can also be used in many other applications due to its wide range of working voltages and current ratings.

Application Fields

The MX1N8168US is commonly used in automotive applications such as automotive power supplies, electronic body control module (ECM) applications, airbags, and electronic instrument clusters. The device is also used in industrial, telecommunications, power supplies, and high voltage motors.

Working Principle

The MX1N8168US has a two-stage protection process. In the first stage, silicon avalanche diodes (SADs) provide fast turn-on protection from the high-energy transients. In the second stage, insulated-gate bi-polar transistors (IGBTs) provide protection from low energy transients. This two-stage protection provides flexibility and a wide dynamic range for transient suppression.

The working principle of the MX1N8168US is based on the PN junction diode. When a high voltage transient is applied, it will cause a current flow through the PN junction. The current diffuses over and current reaches the grounding end and causes a short-circuit, thereby clamping the transient voltage and providing the required protection.

Conclusion

The MX1N8168US is a TVS diode designed specifically for automotive applications. It is a unidirectional device with an avalanche breakdown voltage of 190V. In addition to automotive applications, it is also widely used in industrial, power supplies, and telecommunications. It employs a two-stage protection process consisting of both SADs and IGBTs in order to effectively clamp transient voltages and provide versatile protection.

The specific data is subject to PDF, and the above content is for reference

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MX1N8154US Microsemi Co... 22.58 $ 1000 TVS DIODE
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MX1N8148 Microsemi Co... 22.4 $ 1000 TVS DIODE
MX1N8160 Microsemi Co... 22.4 $ 1000 TVS DIODE
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MX1N8177 Microsemi Co... 22.4 $ 1000 TVS DIODE
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MX1N8157US Microsemi Co... 22.58 $ 1000 TVS DIODE
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