| Allicdata Part #: | MX2N4391UB-ND |
| Manufacturer Part#: |
MX2N4391UB |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | N CHANNEL JFET |
| More Detail: | JFET |
| DataSheet: | MX2N4391UB Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Active |
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The MX2N4391UB is a high voltage insulated gate bipolar transistor (IGBT). It is a type of junction field-effect transistor (JFET) with a gate voltage input allowing for controlled biasing for high current and voltage switching when used in power switching applications. They are typically used for high power switches, inverters, motor control applications, lighting and audio applications from 5KW and up.
The MX2N4391UB is a power MOSFET designed to offer improved performance over plain MOSFETs in a variety of power switching applications. Advanced PowerMOS transistors, like the MX2N4391UB, employ a two-level gate structure which greatly enhances reliability and eliminates parasitic effects that are inherent in plain MOSFETs. This two-level structure is also more immune to Avalanche, which leads to improved voltage overshoot and reduced power dissipation.
The primary purpose of a power MOSFET, like the MX2N4391UB, is to provide the switching power required to turn on and off large currents and voltages in power switch applications. It is also used to protect circuits from overvoltage or transients, or to control inductive loads such as motors. By using an insulated gate, the MX2N4391UB can provide much higher voltage and current switching speeds than a regular MOSFET-based switch.
The working principle of a power MOSFET is based on the relationship between the gate and source voltage. When a voltage is applied to the gate, the charge carriers move between the source and the drain of the device as they pass through the channel region. This creates a drain current that is proportional to the magnitude of the applied gate voltage, and thus the MOSFET behaves as if it were switched on. To switch the MOSFET off, the gate voltage must be reduced so that no current is able to flow through the channel region. The MX2N4391UB has an isolated gate structure and thus minimizes the possibility of gate-to-drain or gate-to-source current leakage.
The MX2N4391UB is suitable for use in applications such as AC motor drives, inverters, and lighting ballasts. Its high voltage and current capabilities, combined with its fast switching speed, make it well suited to these types of applications. It can also be used in high frequency dc-dc converters, high power switches, and various security system applications. It is also suitable for use in low power applications such as audio amplifiers and interface circuits.
In summary, the versatile MX2N4391UB is a type of power MOSFET used in a variety of applications due to its ability to switch rapidly between different voltage and current levels. It is especially suitable for high power applications such as AC motor drives, inverters, and lighting ballasts. Its fast switching speed and high voltage and current capabilities make it a reliable and cost-effective choice for a variety of power switch applications.
The specific data is subject to PDF, and the above content is for reference
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MX2N4391UB Datasheet/PDF