Allicdata Part #: | MX2N4861-ND |
Manufacturer Part#: |
MX2N4861 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | N CHANNEL JFET |
More Detail: | JFET N-Channel 30V 360mW Through Hole TO-18 (TO-2... |
DataSheet: | MX2N4861 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/385 |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Voltage - Breakdown (V(BR)GSS): | 30V |
Drain to Source Voltage (Vdss): | 30V |
Current - Drain (Idss) @ Vds (Vgs=0): | 80mA @ 15V |
Voltage - Cutoff (VGS off) @ Id: | 4V @ 0.5nA |
Input Capacitance (Ciss) (Max) @ Vds: | 18pF @ 10V |
Resistance - RDS(On): | 60 Ohms |
Power - Max: | 360mW |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-206AA, TO-18-3 Metal Can |
Supplier Device Package: | TO-18 (TO-206AA) |
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The MX2N4861 is a junction-gate field effect transistor (JFET) manufactured by Mitsubishi Corporation. It is a general-purpose N-channel MOSFET that provides highly reliable, low-noise and low-power performance for general-purpose, automotive and industrial usage. With its advanced process technology, it provides high reliability and superior power dissipation, giving users cost-effective solutions for their applications.
Application Fields
The MX2N4861 is suitable for applications such as power management, display, and audio-visual equipment, as well as various automotive and industrial systems. As well as being used as a switching device, it can be used as a voltage regulator or as a power amplifier. It is also suitable for applications such as DC/DC converters, power-line meters, portable audio systems, and portable electronic devices. Due to its low on-resistance, it is also suitable for high-side and low-side switching applications.
Working Principle
The junction gate field-effect transistor (JFET) is the simplest type of field effect transistor (FET) and has an "on-state" voltage of about 0V. The JFET typically consists of two n-type layers of semiconductor material, separated by a p-type layer. The n-type layer has free electrons that form a channel between the p-type layer and the source (S) and drain (D) regions. The JFET is connected to the gate (G) which is usually positive, and therefore the voltage is applied to the junction (channel) which causes a depletion layer to form around the gate region, since the regularly charged electrons surrounding the gate repel one another due to the applied voltage. This depletion layer acts as a barrier and prevents current from flowing between the source and the drain, so that when the JFET is in the "off-state" (no voltage applied to the gate), no current will flow. However, when the voltage is increased, the electrons in the depletion layer become more closely packed and the barrier to current flow is reduced, causing current to flow from the source to the drain.
Conclusion
The MX2N4861 is a junction-gate field effect transistor (JFET) manufactured by Mitsubishi Corporation. It is suitable for applications such as power management, display, and audio-visual equipment, as well as various automotive and industrial systems. The general purpose N-channel MOSFET provides highly reliable, low-noise and low-power performance for general-purpose, automotive, and industrial usage. It works by a depletion layer forming around the gate region caused by an applied voltage and preventing current from flowing between the source and the drain until the voltage is increased to allow the electrons in the depletion layer to become closely packed, reducing the barrier to current flow, thus allowing current flow.
The specific data is subject to PDF, and the above content is for reference
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