MX2N4859 Allicdata Electronics
Allicdata Part #:

MX2N4859-ND

Manufacturer Part#:

MX2N4859

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL JFET
More Detail: JFET N-Channel 30V 360mW Through Hole TO-18 (TO-2...
DataSheet: MX2N4859 datasheetMX2N4859 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: Military, MIL-PRF-19500/385
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Resistance - RDS(On): 25 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18 (TO-206AA)
Description

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The MX2N4859 is a field-effect transistor (FET) with a characteristic JFET (junction field-effect transistor) architecture. It operates in a similar manner to other FETs, containing a source, gate and drain terminals — however, rather than the semiconductor channel forming an inherently resistive element, the JFET operates on the principle of controlling its channel conductivity through a voltage applied to the gate terminal.

One of its main advantages is that it can handle very large signal voltages, performing exceptionally well in applications where high frequencies are present. Because of this, the MX2N4859 is commonly used in amplifying, switching and control systems, motor control circuits, and instrumentation.

Despite having a simple structure, the MX2N4859 contains some very specialized parts. The gate terminal is a heavily doped junction field-effect transistor (JFET), used to control the current flowing through the source and drain terminals. There is also a semiconductor material between the gate and drain that forms the channel. This material has been carefully engineered to ensure the highest levels of performance.

The main advantage of the MX2N4859 is that it can handle very large signal voltages with little degradation. It also has very low levels of capacitance between drain and gate, meaning it is well-suited to high-speed applications. The MX2N4859 is also highly efficient and able to produce large currents with very little dissipation — making it ideal for power management tasks.

By controlling the gate terminal, the MX2N4859 is able to control the current flowing through the source and drain. The most common way to do this is by applying a negative voltage to the gate terminal — this will reduce the current flowing through the gate and cause the transistor to open. Alternatively, applying a positive voltage to the gate will cause the transistor to close and increase the current.

The MX2N4859 is a versatile device that can be used in many different circuit applications. Its most popular applications include amplifiers, motor control circuits, switching and control systems, automotive electronics, and instrumentation. Its low power consumption, high frequency performance, and high-current capability make it well-suited for a variety of high-power, low-voltage applications.

In summary, the MX2N4859 is a field-effect transistor with a unique JFET design. Its specialized architecture allows it to handle high signal voltages and frequencies, making it ideal for high-power, low-voltage applications. Its low capacitance between gate and drain also makes it suitable for high-speed applications, such as motor control, instrumentation, and automotive electronics.

The specific data is subject to PDF, and the above content is for reference

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