MXP4KE12A Allicdata Electronics
Allicdata Part #:

1086-12699-ND

Manufacturer Part#:

MXP4KE12A

Price: $ 15.02
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 10.2V 16.7V DO204AL
More Detail: N/A
DataSheet: MXP4KE12A datasheetMXP4KE12A Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
100 +: $ 13.64490
Stock 1000Can Ship Immediately
$ 15.02
Specifications
Voltage - Clamping (Max) @ Ipp: 16.7V
Supplier Device Package: DO-204AL (DO-41)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 24A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 11.4V
Voltage - Reverse Standoff (Typ): 10.2V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MXP4KE12A TVS diode, is a multilayer metal-oxide semiconductor with a breakdown voltage (VBR) of 12V and a peak power dissipation (PD) of 400W. It is a general-purpose TVS diode, designed to protect DC-DC converters, power lines, automotive applications, and other electronics against damaging voltage transients. It is available in a variety of packages, including SMA and SMBJ, and in multiple configurations such as bipolar, bidirectional, and low-voltage protection.

The MXP4KE12A TVS diode is designed for two main applications. The first is to provide overvoltage protection to the DC-DC converters and power lines used in a wide variety of electronics, including automotive and industrial applications. This type of diode is designed to prevent transient overvoltages from damaging these components. The second application is to provide low-voltage protection, preventing circuits from being damaged by transients that occur when connecting and disconnecting devices.

The working principle of the MXP4KE12A TVS diode is based on the breakdown voltage (VBR) of the diode. When a transient voltage rises above the specified breakdown voltage, the diode is triggered into avalanche breakdown mode. This causes the diode to heavily conduct until the supply voltage has dropped off to a safe level, then the diode returns to its normal state. The high rate of power dissipation is useful for applications where the transient has a short rise time. The diode will absorb the energy of the transient and dissipate it as heat, preventing damage to the components.

In addition to protecting components from transients, the MXP4KE12A TVS diode also provides ESD protection. ESD, or electrostatic discharge, occurs when two objects with opposite charges are placed in close proximity. ESD can cause damage to sensitive electronics, and the MXP4KE12A diode is designed to prevent this damage by clamping the voltage and dissipating the energy of the discharge as heat.

The MXP4KE12A TVS diode is a versatile and effective device for protecting sensitive electronics from transients and ESD. Its variety of packages and configurations allows for easy design-in and fast implementation in a wide range of applications. The diode’s ability to absorb and dissipate transient energy is tailored to the specific application, reliably protecting vulnerable components from damage.

The specific data is subject to PDF, and the above content is for reference

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