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TVS - Diodes

The MXP4KE75AE3 is a transient voltage suppressor (TVS) diode with a low capacitance, high ESD protection level and low leakage current. This product provides a highly effective ESD protection against ±8,000 V surge and makes it an ideal solution for portable and non-portable electronic devices.

Applications

The MXP4KE75AE3 is suitable for applications such as PCs, consoles, portable gaming devices, mobile phones, cameras, medical devices, home appliances, AC/DC adapters, wireless modules and displays, automotive electronics, industrial control systems, fitness monitoring and electronic monitoring devices, power and battery protection, wiring and circuit protection, and prototype development.

Working Principle

TVS diodes work based on the principle of avalanche breakdown, which occurs when the voltage across the diode exceeds its reverse breakdown voltage. When the voltage exceeds the reverse breakdown voltage, the diode initiates an avalanche breakdown current, which acts to limit the voltage surge to the specified breakdown voltage.

The MXP4KE75AE3 can absorb energy up to 500 watts for a 10/1,000 nano second of surge duration. When the voltage exceeds the reverse breakdown voltage, the diode induces excess current into its terminals which causes junction or clamping and the device begins to dissipate power. This dissipated power is proportional to the voltage across the diode’s terminals and is limited by the diode’s breakdown voltage. The excess current curves along the applied voltage, allowing for a set working threshold voltage to be reached.

The MXP4KE75AE3 has a breakdown voltage of 7.5V and an ESD rating of 8,000V for human body model, transistor two-line model, and IEC 61000-4-2 air-gap discharge. The device also comes with low capacitance of less than 4pF between the contacts and a low leakage current of less than 5mA.

Conclusion

The MXP4KE75AE3 is a TVS diode designed for providing effective ESD protection against surge up to 8,000 V. It is suitable for multiple applications such as PCs, consoles, medical devices, power and battery protection, automotive electronics, wiring and circuit protection, and many more. The MXP4KE75AE3 works on the principle of avalanche breakdown and can absorb energy up to 500 watts for a 10/1,000 nano second of surge duration. The device has a breakdown voltage of 7.5V and an ESD rating of 8,000V for human body model, transistor two-line model, and IEC 61000-4-2 air-gap discharge.

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